APA (7th ed.) Citation

Zheng, S., Kao, W., Chen, Y., & Wu, Y. Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing. Wiley-VCH.

Chicago Style (17th ed.) Citation

Zheng, Sheng‐Yen, Wei‐Ning Kao, Yu‐Hsing Chen, and Yung‐Hsien Wu. Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing. Wiley-VCH.

MLA (9th ed.) Citation

Zheng, Sheng‐Yen, et al. Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing. Wiley-VCH.