Relationship between Ce3+ 5d1 level, conduction-band bottom, and shallow electron trap level in Gd3Ga5O12:Ce and Gd3Al1Ga4O12:Ce crystals studied via pump-probe absorption spectroscopy
Ce3+-doped compounds are typically the preferred materials for the development of inorganic phosphors for white LEDs, displays, and scintillators. In this study, pump-probe absorption spectroscopy was performed for Gd3Ga5O12:Ce and Gd3Al1Ga4O12:Ce crystals using ultraviolet (UV) and visible (VIS) pu...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-02-01
|
| Series: | Optical Materials: X |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590147824001104 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1825199425264287744 |
|---|---|
| author | Mamoru Kitaura Heishun Zen Shinta Watanabe Hirokazu Masai Kei Kamada Kyoung-Jin Kim Akira Yoshikawa Jumpei Ueda |
| author_facet | Mamoru Kitaura Heishun Zen Shinta Watanabe Hirokazu Masai Kei Kamada Kyoung-Jin Kim Akira Yoshikawa Jumpei Ueda |
| author_sort | Mamoru Kitaura |
| collection | DOAJ |
| description | Ce3+-doped compounds are typically the preferred materials for the development of inorganic phosphors for white LEDs, displays, and scintillators. In this study, pump-probe absorption spectroscopy was performed for Gd3Ga5O12:Ce and Gd3Al1Ga4O12:Ce crystals using ultraviolet (UV) and visible (VIS) pump light, and infrared (IR) probe light. A change in the IR-absorption was observed owing to the generation of free carrier plasma via photoexcitation. Through a simple analysis, the excitation spectra of this change determined the energy at the bottom of the conduction band relative to that at the Ce3+ 4f level. The transient response of the IR-absorption change suggested different relaxation processes for excited electrons in Gd3Ga5O12:Ce and Gd3Al1Ga4O12:Ce. Analysis of the thermally stimulated luminescence (TSL) glow curve determined the trap depth of the electrons in Gd3Al1Ga4O12:Ce. Based on positron annihilation lifetime spectroscopy (PALS), the generation of electron traps was linked to the introduction of vacancy complexes or vacancy aggregates with a negative charge, namely nonstoichiometric compositions. This helps achieve high-quality Ce3+-doped multicomponent oxides. |
| format | Article |
| id | doaj-art-73c6e1b536514089b548270e2abf26fc |
| institution | Kabale University |
| issn | 2590-1478 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Optical Materials: X |
| spelling | doaj-art-73c6e1b536514089b548270e2abf26fc2025-02-08T05:01:05ZengElsevierOptical Materials: X2590-14782025-02-0125100398Relationship between Ce3+ 5d1 level, conduction-band bottom, and shallow electron trap level in Gd3Ga5O12:Ce and Gd3Al1Ga4O12:Ce crystals studied via pump-probe absorption spectroscopyMamoru Kitaura0Heishun Zen1Shinta Watanabe2Hirokazu Masai3Kei Kamada4Kyoung-Jin Kim5Akira Yoshikawa6Jumpei Ueda7Faculty of Science, Yamagata University, Yamagata, 990-8560, Japan; Corresponding author.Institute of Advanced Energy, Kyoto University, Uji, Kyoto, 611-0011, JapanInnovative Technology Laboratories, AGC Inc., Yokohama, Kanagawa, 230-0045, JapanDepartment of Materials and Chemistry, National Institute of Advanced Industrial Science and Technology, Ikeda, Osaka, 563-8577, JapanNew Industry Creation Hatchery Center, Tohoku University, Sendai, Miyagi, 980-0845, JapanInstitute for Materials Research, Tohoku University, Sendai, Miyagi, 980-8577, JapanNew Industry Creation Hatchery Center, Tohoku University, Sendai, Miyagi, 980-0845, Japan; Institute for Materials Research, Tohoku University, Sendai, Miyagi, 980-8577, JapanJapan Advanced Institute of Science and Technology, Nomi, Ishikawa, 923-1292, JapanCe3+-doped compounds are typically the preferred materials for the development of inorganic phosphors for white LEDs, displays, and scintillators. In this study, pump-probe absorption spectroscopy was performed for Gd3Ga5O12:Ce and Gd3Al1Ga4O12:Ce crystals using ultraviolet (UV) and visible (VIS) pump light, and infrared (IR) probe light. A change in the IR-absorption was observed owing to the generation of free carrier plasma via photoexcitation. Through a simple analysis, the excitation spectra of this change determined the energy at the bottom of the conduction band relative to that at the Ce3+ 4f level. The transient response of the IR-absorption change suggested different relaxation processes for excited electrons in Gd3Ga5O12:Ce and Gd3Al1Ga4O12:Ce. Analysis of the thermally stimulated luminescence (TSL) glow curve determined the trap depth of the electrons in Gd3Al1Ga4O12:Ce. Based on positron annihilation lifetime spectroscopy (PALS), the generation of electron traps was linked to the introduction of vacancy complexes or vacancy aggregates with a negative charge, namely nonstoichiometric compositions. This helps achieve high-quality Ce3+-doped multicomponent oxides.http://www.sciencedirect.com/science/article/pii/S2590147824001104Ce3+ ionInorganic phosphorPump-probe absorption spectroscopyFree carrier plasmaMulticomponent oxidesThermally stimulated luminescence |
| spellingShingle | Mamoru Kitaura Heishun Zen Shinta Watanabe Hirokazu Masai Kei Kamada Kyoung-Jin Kim Akira Yoshikawa Jumpei Ueda Relationship between Ce3+ 5d1 level, conduction-band bottom, and shallow electron trap level in Gd3Ga5O12:Ce and Gd3Al1Ga4O12:Ce crystals studied via pump-probe absorption spectroscopy Optical Materials: X Ce3+ ion Inorganic phosphor Pump-probe absorption spectroscopy Free carrier plasma Multicomponent oxides Thermally stimulated luminescence |
| title | Relationship between Ce3+ 5d1 level, conduction-band bottom, and shallow electron trap level in Gd3Ga5O12:Ce and Gd3Al1Ga4O12:Ce crystals studied via pump-probe absorption spectroscopy |
| title_full | Relationship between Ce3+ 5d1 level, conduction-band bottom, and shallow electron trap level in Gd3Ga5O12:Ce and Gd3Al1Ga4O12:Ce crystals studied via pump-probe absorption spectroscopy |
| title_fullStr | Relationship between Ce3+ 5d1 level, conduction-band bottom, and shallow electron trap level in Gd3Ga5O12:Ce and Gd3Al1Ga4O12:Ce crystals studied via pump-probe absorption spectroscopy |
| title_full_unstemmed | Relationship between Ce3+ 5d1 level, conduction-band bottom, and shallow electron trap level in Gd3Ga5O12:Ce and Gd3Al1Ga4O12:Ce crystals studied via pump-probe absorption spectroscopy |
| title_short | Relationship between Ce3+ 5d1 level, conduction-band bottom, and shallow electron trap level in Gd3Ga5O12:Ce and Gd3Al1Ga4O12:Ce crystals studied via pump-probe absorption spectroscopy |
| title_sort | relationship between ce3 5d1 level conduction band bottom and shallow electron trap level in gd3ga5o12 ce and gd3al1ga4o12 ce crystals studied via pump probe absorption spectroscopy |
| topic | Ce3+ ion Inorganic phosphor Pump-probe absorption spectroscopy Free carrier plasma Multicomponent oxides Thermally stimulated luminescence |
| url | http://www.sciencedirect.com/science/article/pii/S2590147824001104 |
| work_keys_str_mv | AT mamorukitaura relationshipbetweence35d1levelconductionbandbottomandshallowelectrontraplevelingd3ga5o12ceandgd3al1ga4o12cecrystalsstudiedviapumpprobeabsorptionspectroscopy AT heishunzen relationshipbetweence35d1levelconductionbandbottomandshallowelectrontraplevelingd3ga5o12ceandgd3al1ga4o12cecrystalsstudiedviapumpprobeabsorptionspectroscopy AT shintawatanabe relationshipbetweence35d1levelconductionbandbottomandshallowelectrontraplevelingd3ga5o12ceandgd3al1ga4o12cecrystalsstudiedviapumpprobeabsorptionspectroscopy AT hirokazumasai relationshipbetweence35d1levelconductionbandbottomandshallowelectrontraplevelingd3ga5o12ceandgd3al1ga4o12cecrystalsstudiedviapumpprobeabsorptionspectroscopy AT keikamada relationshipbetweence35d1levelconductionbandbottomandshallowelectrontraplevelingd3ga5o12ceandgd3al1ga4o12cecrystalsstudiedviapumpprobeabsorptionspectroscopy AT kyoungjinkim relationshipbetweence35d1levelconductionbandbottomandshallowelectrontraplevelingd3ga5o12ceandgd3al1ga4o12cecrystalsstudiedviapumpprobeabsorptionspectroscopy AT akirayoshikawa relationshipbetweence35d1levelconductionbandbottomandshallowelectrontraplevelingd3ga5o12ceandgd3al1ga4o12cecrystalsstudiedviapumpprobeabsorptionspectroscopy AT jumpeiueda relationshipbetweence35d1levelconductionbandbottomandshallowelectrontraplevelingd3ga5o12ceandgd3al1ga4o12cecrystalsstudiedviapumpprobeabsorptionspectroscopy |