Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD
An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of 1KA/cm2 were achieved at room temperature. In addition, the maximum available pow...
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| Format: | Article |
| Language: | English |
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Wiley
2002-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1080/08827510213497 |
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| _version_ | 1850222610568183808 |
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| author | K. F. Yarn |
| author_facet | K. F. Yarn |
| author_sort | K. F. Yarn |
| collection | DOAJ |
| description | An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR)
behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of 1KA/cm2
were
achieved at room temperature. In addition, the maximum available power is estimated up to 5W/cm2
. The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface. |
| format | Article |
| id | doaj-art-73aef8dcedfc421d96a99548c86d7f7b |
| institution | OA Journals |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2002-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-73aef8dcedfc421d96a99548c86d7f7b2025-08-20T02:06:16ZengWileyActive and Passive Electronic Components0882-75161563-50312002-01-0125324524810.1080/08827510213497Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVDK. F. Yarn0Far East College, Department of Electrical Engineering, Optoelectronic Semiconductor Center, Hsin-Shih Tainan Taiwan 744, ChinaAn AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of 1KA/cm2 were achieved at room temperature. In addition, the maximum available power is estimated up to 5W/cm2 . The mechanism for such performance is phenomenologically analyzed by the combination of resonant interband tunneling (RIT) and thermionic emission processes associated with tunneling effect on the metal-semiconductor (MS) interface.http://dx.doi.org/10.1080/08827510213497 |
| spellingShingle | K. F. Yarn Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD Active and Passive Electronic Components |
| title | Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD |
| title_full | Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD |
| title_fullStr | Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD |
| title_full_unstemmed | Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD |
| title_short | Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD |
| title_sort | negative differential resistance behavior in delta doped alinp structure grown by mocvd |
| url | http://dx.doi.org/10.1080/08827510213497 |
| work_keys_str_mv | AT kfyarn negativedifferentialresistancebehaviorindeltadopedalinpstructuregrownbymocvd |