A Study on the Characterization of Novel Silicon-Based Heterojunctions for Optically Controlled Microwave Switching
This paper proposes a structural silicon heterojunction photosensitive element with a simple form, low manufacturing cost, and efficient performance, which has a high-intensity photoelectric effect and a high frequency range of use. It can be applied as microwave switches to active frequency selecti...
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| Format: | Article |
| Language: | English |
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MDPI AG
2025-06-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/25/11/3531 |
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| author | Li Li Weidong Mu Jun Jiang Linglong Zhang Xiaoxing Fang Hang Yuan Qunsheng Cao |
| author_facet | Li Li Weidong Mu Jun Jiang Linglong Zhang Xiaoxing Fang Hang Yuan Qunsheng Cao |
| author_sort | Li Li |
| collection | DOAJ |
| description | This paper proposes a structural silicon heterojunction photosensitive element with a simple form, low manufacturing cost, and efficient performance, which has a high-intensity photoelectric effect and a high frequency range of use. It can be applied as microwave switches to active frequency selective surfaces (AFSSs) to replace PIN diodes. Meanwhile, we explore the crucial role of pentacene/silicon heterojunction in the photoelectric conversion process. It is found that due to the inherent photovoltaic effect and the built-in electric field interaction between the two materials, the insertion loss of the heterojunction formed is reduced to 4.5 dB, which is 2.5 dB lower than that of the high-resistivity silicon wafer. In order to further reduce the insertion loss, the surface of the silicon wafer is etched and then heterojunction is prepared, which can further reduce insertion loss to within 2.5 dB, and the bandwidth difference between the presence and absence of pump excitation exceeds 10 dB extends to 12 GHz, indicating that the light collecting ability of structural silicon significantly enhances its photoelectric effect. The research results demonstrate the potential of using structural silicon heterojunctions in photoelectric devices, providing new technology for high-performance microwave switches and implementing optically controlled FSSs. |
| format | Article |
| id | doaj-art-73ae1f9a093a496aa38821b19bab0fae |
| institution | DOAJ |
| issn | 1424-8220 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj-art-73ae1f9a093a496aa38821b19bab0fae2025-08-20T03:11:20ZengMDPI AGSensors1424-82202025-06-012511353110.3390/s25113531A Study on the Characterization of Novel Silicon-Based Heterojunctions for Optically Controlled Microwave SwitchingLi Li0Weidong Mu1Jun Jiang2Linglong Zhang3Xiaoxing Fang4Hang Yuan5Qunsheng Cao6College of Electronic and Information Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, ChinaCollege of Electronic and Information Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, ChinaKey Laboratory of Aerospace Information Materials and Physics, College of Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, ChinaKey Laboratory of Aerospace Information Materials and Physics, College of Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, ChinaSchool of Electronic and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210004, ChinaCollege of Electronic and Information Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, ChinaCollege of Electronic and Information Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, ChinaThis paper proposes a structural silicon heterojunction photosensitive element with a simple form, low manufacturing cost, and efficient performance, which has a high-intensity photoelectric effect and a high frequency range of use. It can be applied as microwave switches to active frequency selective surfaces (AFSSs) to replace PIN diodes. Meanwhile, we explore the crucial role of pentacene/silicon heterojunction in the photoelectric conversion process. It is found that due to the inherent photovoltaic effect and the built-in electric field interaction between the two materials, the insertion loss of the heterojunction formed is reduced to 4.5 dB, which is 2.5 dB lower than that of the high-resistivity silicon wafer. In order to further reduce the insertion loss, the surface of the silicon wafer is etched and then heterojunction is prepared, which can further reduce insertion loss to within 2.5 dB, and the bandwidth difference between the presence and absence of pump excitation exceeds 10 dB extends to 12 GHz, indicating that the light collecting ability of structural silicon significantly enhances its photoelectric effect. The research results demonstrate the potential of using structural silicon heterojunctions in photoelectric devices, providing new technology for high-performance microwave switches and implementing optically controlled FSSs.https://www.mdpi.com/1424-8220/25/11/3531silicon heterojunctioninorganic semiconductorphotosensitive materialoptically controlled FSSmicrowave switch |
| spellingShingle | Li Li Weidong Mu Jun Jiang Linglong Zhang Xiaoxing Fang Hang Yuan Qunsheng Cao A Study on the Characterization of Novel Silicon-Based Heterojunctions for Optically Controlled Microwave Switching Sensors silicon heterojunction inorganic semiconductor photosensitive material optically controlled FSS microwave switch |
| title | A Study on the Characterization of Novel Silicon-Based Heterojunctions for Optically Controlled Microwave Switching |
| title_full | A Study on the Characterization of Novel Silicon-Based Heterojunctions for Optically Controlled Microwave Switching |
| title_fullStr | A Study on the Characterization of Novel Silicon-Based Heterojunctions for Optically Controlled Microwave Switching |
| title_full_unstemmed | A Study on the Characterization of Novel Silicon-Based Heterojunctions for Optically Controlled Microwave Switching |
| title_short | A Study on the Characterization of Novel Silicon-Based Heterojunctions for Optically Controlled Microwave Switching |
| title_sort | study on the characterization of novel silicon based heterojunctions for optically controlled microwave switching |
| topic | silicon heterojunction inorganic semiconductor photosensitive material optically controlled FSS microwave switch |
| url | https://www.mdpi.com/1424-8220/25/11/3531 |
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