Effect of Different Deposition Power of In2O3 Target on the Characteristics of IGZO Thin Films Using the Cosputtering Method
The (In, Ga, Zn)Ox (IGZO) thin films were deposited on glass substrates using cosputtering method in radio frequency magnetron sputtering system. Zn2Ga2O5 (Ga2O3-2 ZnO, GZO) and In2O3 ceramics were used as targets and dual guns were used to deposit the IGZO thin films. Deposition power of GZO target...
Saved in:
Main Authors: | Shang-Chao Hung, Kin-Tak Lam, Cheng-Fu Yang, Yu-Jhen Liou |
---|---|
Format: | Article |
Language: | English |
Published: |
Wiley
2014-01-01
|
Series: | International Journal of Photoenergy |
Online Access: | http://dx.doi.org/10.1155/2014/739096 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Growth of CZTS Thin Films by Cosputtering of Metal Targets and Sulfurization in H2S
by: N. Muhunthan, et al.
Published: (2013-01-01) -
Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress
by: Muhammad Aslam, et al.
Published: (2024-01-01) -
Low Cost Amorphous Silicon Intrinsic Layer for Thin-Film Tandem Solar Cells
by: Ching-In Wu, et al.
Published: (2013-01-01) -
Influence of Evaporation-Deposition Geometry on Conductive Thin Films
by: J. Griessing
Published: (1980-01-01) -
Using Flexible Polyimide as a Substrate to Deposit ZnO:Ga Thin Films and Fabricate p-i-n α-Si:H Thin-Film Solar Cells
by: Fang-Hsing Wang, et al.
Published: (2013-01-01)