Effect of Different Deposition Power of In2O3 Target on the Characteristics of IGZO Thin Films Using the Cosputtering Method
The (In, Ga, Zn)Ox (IGZO) thin films were deposited on glass substrates using cosputtering method in radio frequency magnetron sputtering system. Zn2Ga2O5 (Ga2O3-2 ZnO, GZO) and In2O3 ceramics were used as targets and dual guns were used to deposit the IGZO thin films. Deposition power of GZO target...
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2014/739096 |
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| author | Shang-Chao Hung Kin-Tak Lam Cheng-Fu Yang Yu-Jhen Liou |
| author_facet | Shang-Chao Hung Kin-Tak Lam Cheng-Fu Yang Yu-Jhen Liou |
| author_sort | Shang-Chao Hung |
| collection | DOAJ |
| description | The (In, Ga, Zn)Ox (IGZO) thin films were deposited on glass substrates using cosputtering method in radio frequency magnetron sputtering system. Zn2Ga2O5 (Ga2O3-2 ZnO, GZO) and In2O3 ceramics were used as targets and dual guns were used to deposit the IGZO thin films. Deposition power of GZO target was 80 W and deposition power of pure In2O3 target was changed from 70 W to 100 W, and the deposition time was 30 min. The effect of deposition power of In2O3 target on the crystalline, surface, electrical, and optical properties of the IGZO thin films was investigated at room temperature in a pure Ar atmosphere. The cosputtered IGZO thin films showed a very smooth and featureless surface and an amorphous structure regardless of the deposition power of In2O3 target due to the room temperature sputtering process. However, the cosputtered IGZO thin films exhibited transparent electrode properties because they had high transmittance ratio and low resistivity. The value variations in the optical band gap (Eg) values of the IGZO thin film were evaluated from the plots of (αhν)2=c(hν-Eg). We would also show that the deposition power of In2O3 target would have a large effect on mobility and Eg value of the IGZO thin films. |
| format | Article |
| id | doaj-art-7368820224324bffb20cbc24eb537f24 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-7368820224324bffb20cbc24eb537f242025-02-03T01:12:19ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2014-01-01201410.1155/2014/739096739096Effect of Different Deposition Power of In2O3 Target on the Characteristics of IGZO Thin Films Using the Cosputtering MethodShang-Chao Hung0Kin-Tak Lam1Cheng-Fu Yang2Yu-Jhen Liou3Department of Information Technology and Communication, Shih Chien University, Kaohsiung Campus, Kaohsiung 84550, TaiwanInstitute of Creative Industries Research, Xiamen Academy of Arts and Design, Fuzhou University, Xiamen 361021, ChinaDepartment of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 81148, TaiwanDepartment of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 81148, TaiwanThe (In, Ga, Zn)Ox (IGZO) thin films were deposited on glass substrates using cosputtering method in radio frequency magnetron sputtering system. Zn2Ga2O5 (Ga2O3-2 ZnO, GZO) and In2O3 ceramics were used as targets and dual guns were used to deposit the IGZO thin films. Deposition power of GZO target was 80 W and deposition power of pure In2O3 target was changed from 70 W to 100 W, and the deposition time was 30 min. The effect of deposition power of In2O3 target on the crystalline, surface, electrical, and optical properties of the IGZO thin films was investigated at room temperature in a pure Ar atmosphere. The cosputtered IGZO thin films showed a very smooth and featureless surface and an amorphous structure regardless of the deposition power of In2O3 target due to the room temperature sputtering process. However, the cosputtered IGZO thin films exhibited transparent electrode properties because they had high transmittance ratio and low resistivity. The value variations in the optical band gap (Eg) values of the IGZO thin film were evaluated from the plots of (αhν)2=c(hν-Eg). We would also show that the deposition power of In2O3 target would have a large effect on mobility and Eg value of the IGZO thin films.http://dx.doi.org/10.1155/2014/739096 |
| spellingShingle | Shang-Chao Hung Kin-Tak Lam Cheng-Fu Yang Yu-Jhen Liou Effect of Different Deposition Power of In2O3 Target on the Characteristics of IGZO Thin Films Using the Cosputtering Method International Journal of Photoenergy |
| title | Effect of Different Deposition Power of In2O3 Target on the Characteristics of IGZO Thin Films Using the Cosputtering Method |
| title_full | Effect of Different Deposition Power of In2O3 Target on the Characteristics of IGZO Thin Films Using the Cosputtering Method |
| title_fullStr | Effect of Different Deposition Power of In2O3 Target on the Characteristics of IGZO Thin Films Using the Cosputtering Method |
| title_full_unstemmed | Effect of Different Deposition Power of In2O3 Target on the Characteristics of IGZO Thin Films Using the Cosputtering Method |
| title_short | Effect of Different Deposition Power of In2O3 Target on the Characteristics of IGZO Thin Films Using the Cosputtering Method |
| title_sort | effect of different deposition power of in2o3 target on the characteristics of igzo thin films using the cosputtering method |
| url | http://dx.doi.org/10.1155/2014/739096 |
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