Formation of targets and investigation of Mn4Si7 coatings produced by magnetron sputtering
The morphology, composition, electrical and optical properties of bulk samples and vacuum coatings of Mn4Si7 obtained by magnetron sputtering on a SiO2/Si structure were studied. It is shown that manganese silicide coatings with a thickness of about 150 nm are close in properties to bulk Mn4Si7, ha...
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Academician Ye.A. Buketov Karaganda University
2023-09-01
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| Series: | Қарағанды университетінің хабаршысы. Физика сериясы |
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| Online Access: | https://phs.buketov.edu.kz/index.php/physics-vestnik/article/view/518 |
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| author | Б.Д. Игамов Г.Т. Иманова А.И. Камардин И.Р. Бекпулатов |
| author_facet | Б.Д. Игамов Г.Т. Иманова А.И. Камардин И.Р. Бекпулатов |
| author_sort | Б.Д. Игамов |
| collection | DOAJ |
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The morphology, composition, electrical and optical properties of bulk samples and vacuum coatings of Mn4Si7 obtained by magnetron sputtering on a SiO2/Si structure were studied. It is shown that manganese silicide coatings with a thickness of about 150 nm are close in properties to bulk Mn4Si7, have a uniform finegrained structure of a semiconductor nature, which is characterized by thermal sensitivity up to 20-30 μV per degree. In addition, this article presents the electrophysical properties of high manganese silicide films produced by the authors by magnetron sputtering method. Heated films Mn4Si7 -146 nm coating has a uniform structure with fine grains, due to sufficient coating density. Since Mn4Si7 nanoclusters are semiconductor materials, it can be assumed that there will be energy barriers for charge carriers at the nanocluster–amorphous phase interface separating this phase. An increase in thermal sensitivity from 0 μV/K to 20 μV/K up to 800 K is explained by the disappearance of energy barriers for charge carriers at the nanocluster–amorphous phase interface due to the ordering of nanoclusters. The change from 20 µV/K to 28 µV/K upon cooling is explained by the appearance of structural relaxation in the amorphous phase.
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| format | Article |
| id | doaj-art-7300bf3e039243f8ab163f87fce9dbf9 |
| institution | DOAJ |
| issn | 2518-7198 2663-5089 |
| language | English |
| publishDate | 2023-09-01 |
| publisher | Academician Ye.A. Buketov Karaganda University |
| record_format | Article |
| series | Қарағанды университетінің хабаршысы. Физика сериясы |
| spelling | doaj-art-7300bf3e039243f8ab163f87fce9dbf92025-08-20T03:10:20ZengAcademician Ye.A. Buketov Karaganda UniversityҚарағанды университетінің хабаршысы. Физика сериясы2518-71982663-50892023-09-01111310.31489/2023ph3/50-57Formation of targets and investigation of Mn4Si7 coatings produced by magnetron sputteringБ.Д. ИгамовГ.Т. ИмановаА.И. КамардинИ.Р. Бекпулатов The morphology, composition, electrical and optical properties of bulk samples and vacuum coatings of Mn4Si7 obtained by magnetron sputtering on a SiO2/Si structure were studied. It is shown that manganese silicide coatings with a thickness of about 150 nm are close in properties to bulk Mn4Si7, have a uniform finegrained structure of a semiconductor nature, which is characterized by thermal sensitivity up to 20-30 μV per degree. In addition, this article presents the electrophysical properties of high manganese silicide films produced by the authors by magnetron sputtering method. Heated films Mn4Si7 -146 nm coating has a uniform structure with fine grains, due to sufficient coating density. Since Mn4Si7 nanoclusters are semiconductor materials, it can be assumed that there will be energy barriers for charge carriers at the nanocluster–amorphous phase interface separating this phase. An increase in thermal sensitivity from 0 μV/K to 20 μV/K up to 800 K is explained by the disappearance of energy barriers for charge carriers at the nanocluster–amorphous phase interface due to the ordering of nanoclusters. The change from 20 µV/K to 28 µV/K upon cooling is explained by the appearance of structural relaxation in the amorphous phase. https://phs.buketov.edu.kz/index.php/physics-vestnik/article/view/518Hall constantMn4Si7thin coatingnanoclusterelectrical conductivitynanostructure |
| spellingShingle | Б.Д. Игамов Г.Т. Иманова А.И. Камардин И.Р. Бекпулатов Formation of targets and investigation of Mn4Si7 coatings produced by magnetron sputtering Қарағанды университетінің хабаршысы. Физика сериясы Hall constant Mn4Si7 thin coating nanocluster electrical conductivity nanostructure |
| title | Formation of targets and investigation of Mn4Si7 coatings produced by magnetron sputtering |
| title_full | Formation of targets and investigation of Mn4Si7 coatings produced by magnetron sputtering |
| title_fullStr | Formation of targets and investigation of Mn4Si7 coatings produced by magnetron sputtering |
| title_full_unstemmed | Formation of targets and investigation of Mn4Si7 coatings produced by magnetron sputtering |
| title_short | Formation of targets and investigation of Mn4Si7 coatings produced by magnetron sputtering |
| title_sort | formation of targets and investigation of mn4si7 coatings produced by magnetron sputtering |
| topic | Hall constant Mn4Si7 thin coating nanocluster electrical conductivity nanostructure |
| url | https://phs.buketov.edu.kz/index.php/physics-vestnik/article/view/518 |
| work_keys_str_mv | AT bdigamov formationoftargetsandinvestigationofmn4si7coatingsproducedbymagnetronsputtering AT gtimanova formationoftargetsandinvestigationofmn4si7coatingsproducedbymagnetronsputtering AT aikamardin formationoftargetsandinvestigationofmn4si7coatingsproducedbymagnetronsputtering AT irbekpulatov formationoftargetsandinvestigationofmn4si7coatingsproducedbymagnetronsputtering |