Super-Resolution Raman Spectroscopy by Digital Image Processing
We demonstrate the results of a strain (stress) evaluation obtained from Raman spectroscopy measurements with the super-resolution method (the so-called super-resolution Raman spectroscopy) for a Si substrate with a patterned SiN film (serving as a strained Si sample). To improve the spatial resolut...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2013-01-01
|
| Series: | Journal of Spectroscopy |
| Online Access: | http://dx.doi.org/10.1155/2013/459032 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832548610814771200 |
|---|---|
| author | Motohiro Tomita Hiroki Hashiguchi Takuya Yamaguchi Munehisa Takei Daisuke Kosemura Atsushi Ogura |
| author_facet | Motohiro Tomita Hiroki Hashiguchi Takuya Yamaguchi Munehisa Takei Daisuke Kosemura Atsushi Ogura |
| author_sort | Motohiro Tomita |
| collection | DOAJ |
| description | We demonstrate the results of a strain (stress) evaluation obtained from Raman spectroscopy measurements with the super-resolution method (the so-called super-resolution Raman spectroscopy) for a Si substrate with a patterned SiN film (serving as a strained Si sample). To improve the spatial resolution of Raman spectroscopy, we used the super-resolution method and a high-numerical-aperture immersion lens. Additionally, we estimated the spatial resolution by an edge force model (EFM) calculation. One- and two-dimensional stress distributions in the Si substrate with the patterned SiN film were obtained by super-resolution Raman spectroscopy. The results from both super-resolution Raman spectroscopy and the EFM calculation were compared and were found to correlate well. The best spatial resolution, 70 nm, was achieved by super-resolution Raman measurements with an oil immersion lens. We conclude that super-resolution Raman spectroscopy is a useful method for evaluating stress in miniaturized state-of-the-art transistors, and we believe that the super-resolution method will soon be a requisite technique. |
| format | Article |
| id | doaj-art-72606f24c10d4a2a9bf06f0d9d994346 |
| institution | Kabale University |
| issn | 2314-4920 2314-4939 |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Journal of Spectroscopy |
| spelling | doaj-art-72606f24c10d4a2a9bf06f0d9d9943462025-02-03T06:13:37ZengWileyJournal of Spectroscopy2314-49202314-49392013-01-01201310.1155/2013/459032459032Super-Resolution Raman Spectroscopy by Digital Image ProcessingMotohiro Tomita0Hiroki Hashiguchi1Takuya Yamaguchi2Munehisa Takei3Daisuke Kosemura4Atsushi Ogura5School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, JapanSchool of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, JapanSchool of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, JapanSchool of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, JapanSchool of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, JapanSchool of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, JapanWe demonstrate the results of a strain (stress) evaluation obtained from Raman spectroscopy measurements with the super-resolution method (the so-called super-resolution Raman spectroscopy) for a Si substrate with a patterned SiN film (serving as a strained Si sample). To improve the spatial resolution of Raman spectroscopy, we used the super-resolution method and a high-numerical-aperture immersion lens. Additionally, we estimated the spatial resolution by an edge force model (EFM) calculation. One- and two-dimensional stress distributions in the Si substrate with the patterned SiN film were obtained by super-resolution Raman spectroscopy. The results from both super-resolution Raman spectroscopy and the EFM calculation were compared and were found to correlate well. The best spatial resolution, 70 nm, was achieved by super-resolution Raman measurements with an oil immersion lens. We conclude that super-resolution Raman spectroscopy is a useful method for evaluating stress in miniaturized state-of-the-art transistors, and we believe that the super-resolution method will soon be a requisite technique.http://dx.doi.org/10.1155/2013/459032 |
| spellingShingle | Motohiro Tomita Hiroki Hashiguchi Takuya Yamaguchi Munehisa Takei Daisuke Kosemura Atsushi Ogura Super-Resolution Raman Spectroscopy by Digital Image Processing Journal of Spectroscopy |
| title | Super-Resolution Raman Spectroscopy by Digital Image Processing |
| title_full | Super-Resolution Raman Spectroscopy by Digital Image Processing |
| title_fullStr | Super-Resolution Raman Spectroscopy by Digital Image Processing |
| title_full_unstemmed | Super-Resolution Raman Spectroscopy by Digital Image Processing |
| title_short | Super-Resolution Raman Spectroscopy by Digital Image Processing |
| title_sort | super resolution raman spectroscopy by digital image processing |
| url | http://dx.doi.org/10.1155/2013/459032 |
| work_keys_str_mv | AT motohirotomita superresolutionramanspectroscopybydigitalimageprocessing AT hirokihashiguchi superresolutionramanspectroscopybydigitalimageprocessing AT takuyayamaguchi superresolutionramanspectroscopybydigitalimageprocessing AT munehisatakei superresolutionramanspectroscopybydigitalimageprocessing AT daisukekosemura superresolutionramanspectroscopybydigitalimageprocessing AT atsushiogura superresolutionramanspectroscopybydigitalimageprocessing |