A 12 GHz low noise amplifier with high-gain
A two-stage low noise amplifier(LNA) with high gain and low power is proposed by analyzing the characteristics of GaAs pHEMT devices. A two-stage structure is used to increase the gain of the low noise amplifier, a shared current structure is presented to reduce the power consumption of the amplifie...
Saved in:
| Main Authors: | He Moxu, Hu Junjian, Gao Bo, He Liangjin |
|---|---|
| Format: | Article |
| Language: | zho |
| Published: |
National Computer System Engineering Research Institute of China
2022-04-01
|
| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000148334 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Frequency-Bounded Matching Strategy for Wideband LNA Design Utilising a Relaxed SSNM Approach
by: Vanya Sharma, et al.
Published: (2025-07-01) -
A 6.1-to-41.5 GHz CMOS Low-Noise Amplifier for Wideband and Highly Linear Applications
by: Yeheon Park, et al.
Published: (2025-03-01) -
W-Band Low-Noise Amplifier with Improved Stability Using Dual RC Traps in Bias Networks on a 0.1 μm GaAs pHEMT Process
by: Seong-Hee Han, et al.
Published: (2025-02-01) -
W-Band GaAs pHEMT Power Amplifier MMIC Stabilized Using Network Determinant Function
by: Seong-Hee Han, et al.
Published: (2025-01-01) -
Optimized Cascode LNA design for low noise and high gain at 5 GHz
by: Md. Hasan Maruf, et al.
Published: (2025-06-01)