A 12 GHz low noise amplifier with high-gain
A two-stage low noise amplifier(LNA) with high gain and low power is proposed by analyzing the characteristics of GaAs pHEMT devices. A two-stage structure is used to increase the gain of the low noise amplifier, a shared current structure is presented to reduce the power consumption of the amplifie...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
National Computer System Engineering Research Institute of China
2022-04-01
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| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000148334 |
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| Summary: | A two-stage low noise amplifier(LNA) with high gain and low power is proposed by analyzing the characteristics of GaAs pHEMT devices. A two-stage structure is used to increase the gain of the low noise amplifier, a shared current structure is presented to reduce the power consumption of the amplifier and the circuit noise at the same time. Input and output matching adopt LC ladder matching network, which has good matching performance. The circuit is simulated using CAD software. The circuit simulation results show that the gain is 27.299 dB, the noise figure is 0.889 dB, S11 and S22 are both less than -10 dB at the center frequency of 12 GHz, and the working bandwidth is 600 MHz. This low-noise amplifier has a certain significance as the front-end design research of the receiver in the 12 GHz frequency band. |
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| ISSN: | 0258-7998 |