Efficient and stable near-infrared InAs quantum dot light-emitting diodes
Abstract Visible quantum dot light-emitting diodes have satisfied commercial display requirements. However, near-infrared counterparts considerably lag behind due to the inferior quality of near-infrared quantum dots and limitations in device architecture suitable for near-infrared electroluminescen...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2025-03-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-57746-1 |
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| author | Binghan Li Yu Wang Jiancheng Zhang Yaobo Li Bo Li Qingli Lin Ruijia Sun Fengjia Fan Zaiping Zeng Huaibin Shen Botao Ji |
| author_facet | Binghan Li Yu Wang Jiancheng Zhang Yaobo Li Bo Li Qingli Lin Ruijia Sun Fengjia Fan Zaiping Zeng Huaibin Shen Botao Ji |
| author_sort | Binghan Li |
| collection | DOAJ |
| description | Abstract Visible quantum dot light-emitting diodes have satisfied commercial display requirements. However, near-infrared counterparts considerably lag behind due to the inferior quality of near-infrared quantum dots and limitations in device architecture suitable for near-infrared electroluminescence. Here, we present an efficient strategy using zinc fluoride to balance ZnSe shell growth across different core quantum dot facets, producing highly regular InAs/InP/ZnSe/ZnS quantum dots with near-unity quantum yield. Moreover, we develop a method of in-situ photo-crosslinking blended hole-transport materials for accurate energy level modulation. The crosslinked hole-transport layers enhance hole transfer to the emitting layer for balanced carrier dynamics in quantum dot light-emitting diodes. The resulting near-infrared quantum dot light-emitting diodes exhibit a peak external quantum efficiency of 20.5%, a maximum radiance of 581.4 W sr−1 m−2 and an operational half-lifetime of 550 h at 50 W sr−1 m−2. This study represents a step towards practical application of near-infrared quantum dot light-emitting diodes. |
| format | Article |
| id | doaj-art-7243b885bc4241be8902febeb4b3c75b |
| institution | DOAJ |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-7243b885bc4241be8902febeb4b3c75b2025-08-20T03:01:23ZengNature PortfolioNature Communications2041-17232025-03-0116111010.1038/s41467-025-57746-1Efficient and stable near-infrared InAs quantum dot light-emitting diodesBinghan Li0Yu Wang1Jiancheng Zhang2Yaobo Li3Bo Li4Qingli Lin5Ruijia Sun6Fengjia Fan7Zaiping Zeng8Huaibin Shen9Botao Ji10Zhejiang Key Laboratory of 3D Micro/Nano Fabrication and Characterization, School of Engineering, Westlake UniversityKey Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan UniversityZhejiang Key Laboratory of 3D Micro/Nano Fabrication and Characterization, School of Engineering, Westlake UniversityHenan International Joint Laboratory of Quantum Dot Materials, School of Materials Science and Engineering, Henan UniversityCAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of ChinaKey Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan UniversityZhejiang Key Laboratory of 3D Micro/Nano Fabrication and Characterization, School of Engineering, Westlake UniversityCAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of ChinaHenan International Joint Laboratory of Quantum Dot Materials, School of Materials Science and Engineering, Henan UniversityKey Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan UniversityZhejiang Key Laboratory of 3D Micro/Nano Fabrication and Characterization, School of Engineering, Westlake UniversityAbstract Visible quantum dot light-emitting diodes have satisfied commercial display requirements. However, near-infrared counterparts considerably lag behind due to the inferior quality of near-infrared quantum dots and limitations in device architecture suitable for near-infrared electroluminescence. Here, we present an efficient strategy using zinc fluoride to balance ZnSe shell growth across different core quantum dot facets, producing highly regular InAs/InP/ZnSe/ZnS quantum dots with near-unity quantum yield. Moreover, we develop a method of in-situ photo-crosslinking blended hole-transport materials for accurate energy level modulation. The crosslinked hole-transport layers enhance hole transfer to the emitting layer for balanced carrier dynamics in quantum dot light-emitting diodes. The resulting near-infrared quantum dot light-emitting diodes exhibit a peak external quantum efficiency of 20.5%, a maximum radiance of 581.4 W sr−1 m−2 and an operational half-lifetime of 550 h at 50 W sr−1 m−2. This study represents a step towards practical application of near-infrared quantum dot light-emitting diodes.https://doi.org/10.1038/s41467-025-57746-1 |
| spellingShingle | Binghan Li Yu Wang Jiancheng Zhang Yaobo Li Bo Li Qingli Lin Ruijia Sun Fengjia Fan Zaiping Zeng Huaibin Shen Botao Ji Efficient and stable near-infrared InAs quantum dot light-emitting diodes Nature Communications |
| title | Efficient and stable near-infrared InAs quantum dot light-emitting diodes |
| title_full | Efficient and stable near-infrared InAs quantum dot light-emitting diodes |
| title_fullStr | Efficient and stable near-infrared InAs quantum dot light-emitting diodes |
| title_full_unstemmed | Efficient and stable near-infrared InAs quantum dot light-emitting diodes |
| title_short | Efficient and stable near-infrared InAs quantum dot light-emitting diodes |
| title_sort | efficient and stable near infrared inas quantum dot light emitting diodes |
| url | https://doi.org/10.1038/s41467-025-57746-1 |
| work_keys_str_mv | AT binghanli efficientandstablenearinfraredinasquantumdotlightemittingdiodes AT yuwang efficientandstablenearinfraredinasquantumdotlightemittingdiodes AT jianchengzhang efficientandstablenearinfraredinasquantumdotlightemittingdiodes AT yaoboli efficientandstablenearinfraredinasquantumdotlightemittingdiodes AT boli efficientandstablenearinfraredinasquantumdotlightemittingdiodes AT qinglilin efficientandstablenearinfraredinasquantumdotlightemittingdiodes AT ruijiasun efficientandstablenearinfraredinasquantumdotlightemittingdiodes AT fengjiafan efficientandstablenearinfraredinasquantumdotlightemittingdiodes AT zaipingzeng efficientandstablenearinfraredinasquantumdotlightemittingdiodes AT huaibinshen efficientandstablenearinfraredinasquantumdotlightemittingdiodes AT botaoji efficientandstablenearinfraredinasquantumdotlightemittingdiodes |