Nanostructured Hydrogenated Silicon Films by Hot-Wire Chemical Vapor Deposition: the Influence of Substrate Temperature on Material Properties
Thin films of hydrogenated nanocrystalline silicon are prepared at reasonably higher deposition rates (9-13 Å/s) by indigenously fabricated hot-wire chemical vapor deposition system at various substrate temperatures (Ts). In this paper we report extensively studied structural, optical and electrical...
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| Format: | Article |
| Language: | English |
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Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%203/articles/jnep_2011_V3_N1(Part3)_590-600.pdf |
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| author | V.S. Waman M.M. Kamble M.R. Pramod A.M. Funde V.G. Sathe S.W. Gosavi S.R. Jadkar |
| author_facet | V.S. Waman M.M. Kamble M.R. Pramod A.M. Funde V.G. Sathe S.W. Gosavi S.R. Jadkar |
| author_sort | V.S. Waman |
| collection | DOAJ |
| description | Thin films of hydrogenated nanocrystalline silicon are prepared at reasonably higher deposition rates (9-13 Å/s) by indigenously fabricated hot-wire chemical vapor deposition system at various substrate temperatures (Ts). In this paper we report extensively studied structural, optical and electrical properties of these films by Fourier transform infrared (FTIR) spectroscopy, low angle X-ray diffraction (low angle XRD), micro-Raman spectroscopy and UV-Visible spectroscopy. The low angle XRD and micro-Raman spectroscopy analysis indicate amorphous-to-nanocrystalline transition occurred at Ts = 300 °C. It is observed that volume fraction of crystallites and its size increases with increase in Ts. The low angle XRD study also shows nc-Si:H films with well-identified lattice planes of (111) orientation. In addition, it is observed from the FTIR spectroscopy that the hydrogen is incorporated in the film mainly in Si-H2 and (Si-H2)n complexes. The nc-Si:H films with low hydrogen content (< 4 at. %) and wide band gap (1.83-1.89 eV) and low refractive index (< 3) is useful for various device applications. |
| format | Article |
| id | doaj-art-7209c606facb4eaaa510e2630816011b |
| institution | OA Journals |
| issn | 2077-6772 |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-7209c606facb4eaaa510e2630816011b2025-08-20T02:06:35ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722011-01-0131590600Nanostructured Hydrogenated Silicon Films by Hot-Wire Chemical Vapor Deposition: the Influence of Substrate Temperature on Material PropertiesV.S. WamanM.M. KambleM.R. PramodA.M. FundeV.G. SatheS.W. GosaviS.R. JadkarThin films of hydrogenated nanocrystalline silicon are prepared at reasonably higher deposition rates (9-13 Å/s) by indigenously fabricated hot-wire chemical vapor deposition system at various substrate temperatures (Ts). In this paper we report extensively studied structural, optical and electrical properties of these films by Fourier transform infrared (FTIR) spectroscopy, low angle X-ray diffraction (low angle XRD), micro-Raman spectroscopy and UV-Visible spectroscopy. The low angle XRD and micro-Raman spectroscopy analysis indicate amorphous-to-nanocrystalline transition occurred at Ts = 300 °C. It is observed that volume fraction of crystallites and its size increases with increase in Ts. The low angle XRD study also shows nc-Si:H films with well-identified lattice planes of (111) orientation. In addition, it is observed from the FTIR spectroscopy that the hydrogen is incorporated in the film mainly in Si-H2 and (Si-H2)n complexes. The nc-Si:H films with low hydrogen content (< 4 at. %) and wide band gap (1.83-1.89 eV) and low refractive index (< 3) is useful for various device applications.http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%203/articles/jnep_2011_V3_N1(Part3)_590-600.pdfHot Wire Chemical Vapor DepositionNanocrystalline Silicon Thin FilmsStructural PropertiesOptical PropertiesElectrical Properties |
| spellingShingle | V.S. Waman M.M. Kamble M.R. Pramod A.M. Funde V.G. Sathe S.W. Gosavi S.R. Jadkar Nanostructured Hydrogenated Silicon Films by Hot-Wire Chemical Vapor Deposition: the Influence of Substrate Temperature on Material Properties Журнал нано- та електронної фізики Hot Wire Chemical Vapor Deposition Nanocrystalline Silicon Thin Films Structural Properties Optical Properties Electrical Properties |
| title | Nanostructured Hydrogenated Silicon Films by Hot-Wire Chemical Vapor Deposition: the Influence of Substrate Temperature on Material Properties |
| title_full | Nanostructured Hydrogenated Silicon Films by Hot-Wire Chemical Vapor Deposition: the Influence of Substrate Temperature on Material Properties |
| title_fullStr | Nanostructured Hydrogenated Silicon Films by Hot-Wire Chemical Vapor Deposition: the Influence of Substrate Temperature on Material Properties |
| title_full_unstemmed | Nanostructured Hydrogenated Silicon Films by Hot-Wire Chemical Vapor Deposition: the Influence of Substrate Temperature on Material Properties |
| title_short | Nanostructured Hydrogenated Silicon Films by Hot-Wire Chemical Vapor Deposition: the Influence of Substrate Temperature on Material Properties |
| title_sort | nanostructured hydrogenated silicon films by hot wire chemical vapor deposition the influence of substrate temperature on material properties |
| topic | Hot Wire Chemical Vapor Deposition Nanocrystalline Silicon Thin Films Structural Properties Optical Properties Electrical Properties |
| url | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%203/articles/jnep_2011_V3_N1(Part3)_590-600.pdf |
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