Impact of Band Nonparabolicity on Threshold Voltage of Nanoscale SOI MOSFET
This paper reconsiders the mathematical formulation of the conventional nonparabolic band model and proposes a model of the effective mass of conduction band electrons including the nonparabolicity of the conduction band. It is demonstrated that this model produces realistic results for a sub-10-nm-...
Saved in:
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2016-01-01
|
| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2016/6068171 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | This paper reconsiders the mathematical formulation of the conventional nonparabolic band model and proposes a model of the effective mass of conduction band electrons including the nonparabolicity of the conduction band. It is demonstrated that this model produces realistic results for a sub-10-nm-thick Si layer surrounded by an SiO2 layer. The major part of the discussion is focused on the low-dimensional electron system confined with insulator barriers. To examine the feasibility of our consideration, the model is applied to the threshold voltage of nanoscale SOI FinFETs and compared to prior experimental results. This paper also addresses a model of the effective mass of valence band holes assuming the nonparabolic condition. |
|---|---|
| ISSN: | 0882-7516 1563-5031 |