Amorphous Engineering Driving d‐Orbital High Spin Configuration for Almost 100% 1O2‐Mediated Fenton‐Like Reactions
Abstract The inherent atomic disorder in amorphous materials leads to unsaturated atomic sites or dangling bonds, effectively modulating the material's electronic states and rendering it an ideal platform for the growth of single atoms. Herein, the electronic structure of isolated cobalt atoms...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2025-07-01
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| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202503665 |
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