Enhancing the Performance of Blue Quantum-Dot Light-Emitting Diodes Based on Mg-Doped ZnO as an Electron Transport Layer

Enhancing the Performance of Blue Quantum-Dot Light-Emitting Diodes Based on Mg-Doped ZnO as an Electron Transport Layer

Highly efficient blue quantum-dot light-emitting diodes (QD-LEDs) have been fabricated by substituting Mg-doped ZnO (Mg<italic><sub>x</sub></italic>Zn<sub>1-</sub><italic><sub>x</sub></italic>O) for ZnO as an electron transporting layer (ET...

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Bibliographic Details
Main Authors: Min-Ming Yan, Yi Li, Yong-Tian Zhou, Li Liu, Yong Zhang, Bao-Gui You, Yang Li
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Photonics Journal
Subjects:
Light-emitting diodes (LEDs)
quantum dots (QDs)
ZnO
Mg-doped ZnO
electron transporting layers (ETLs).
Online Access:https://ieeexplore.ieee.org/document/7873233/
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Summary:Highly efficient blue quantum-dot light-emitting diodes (QD-LEDs) have been fabricated by substituting Mg-doped ZnO (Mg<italic><sub>x</sub></italic>Zn<sub>1-</sub><italic><sub>x</sub></italic>O) for ZnO as an electron transporting layer (ETL). The device performance can be enhanced by optimizing Mg-doped ratios for the device structure of ITO&#x002F;PEDOT:PSS&#x002F;PVK&#x002F;QDs&#x002F;Mg<sub>x</sub>Zn<sub>1-</sub><italic><sub>x</sub></italic>O&#x002F;Al. The maximum luminescence efficiency and maximum brightness of blue QD-LEDs increase from 1.1 cd&#x002F;A and 1500 cd&#x002F;m<sup>2</sup> for ZnO to 2.3 cd&#x002F;A and 2500 cd&#x002F;m<sup>2</sup> for 10&#x0025; Mg-doped ZnO (Mg<sub>0.10</sub>Zn<sub>0.90</sub> O), respectively. The improved device performance should be attributed to balance electron and hole injection due to Mg-doped ZnO increasing the band gap and reduce exciton loss at the interface between the ETL and the emissive layer.
ISSN:1943-0655

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