Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics
Abstract Edge computing architectures are intended to store and process data nearby the sensor, while ensuring fast and safe data processing, low power consumption and cost minimization. The stability, mechanical flexibility, huge computational and storage requirements needed for these applications...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-02-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400184 |
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| author | Sabrina Calvi Marco Bertelli Sara De Simone Francesco Maita Simone Prili Adriano Diaz Fattorini Fabio De Matteis Valentina Mussi Flavia Righi Riva Massimo Longo Fabrizio Arciprete Raffaella Calarco |
| author_facet | Sabrina Calvi Marco Bertelli Sara De Simone Francesco Maita Simone Prili Adriano Diaz Fattorini Fabio De Matteis Valentina Mussi Flavia Righi Riva Massimo Longo Fabrizio Arciprete Raffaella Calarco |
| author_sort | Sabrina Calvi |
| collection | DOAJ |
| description | Abstract Edge computing architectures are intended to store and process data nearby the sensor, while ensuring fast and safe data processing, low power consumption and cost minimization. The stability, mechanical flexibility, huge computational and storage requirements needed for these applications are beyond the capability of current embedded devices. Memories based on phase‐change materials have the potential to overcome these issues. However, their behavior on flexible substrates is yet to be understood and alloys owning the required key features still need to be proposed. With this work, it is demonstrated that Ge–Sb–Te (GST) alloys are large‐area scalable and directly processable on flexible substrates, while their large resistance contrast enables the prospect of multilevel data encoding. Remarkably, the Ge enrichment acts as both thermal and mechanical stabilizer within the alloy. The highlighted features of Ge‐enriched GST alloys show their potential as new active materials for the most demanding flexible edge electronics applications. |
| format | Article |
| id | doaj-art-7027f266f1fc47e19cc3ef49a1ce4b85 |
| institution | OA Journals |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-7027f266f1fc47e19cc3ef49a1ce4b852025-08-20T01:56:32ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-02-01112n/an/a10.1002/aelm.202400184Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge ElectronicsSabrina Calvi0Marco Bertelli1Sara De Simone2Francesco Maita3Simone Prili4Adriano Diaz Fattorini5Fabio De Matteis6Valentina Mussi7Flavia Righi Riva8Massimo Longo9Fabrizio Arciprete10Raffaella Calarco11Department of Physics University of Rome Tor Vergata Via della Ricerca Scientifica 1 Rome 00133 ItalyInstitute for Microelectronics and Microsystems (IMM) Consiglio Nazionale delle Ricerche (CNR) Via del Fosso del Cavaliere 100 Rome 00133 ItalyInstitute for Microelectronics and Microsystems (IMM) Consiglio Nazionale delle Ricerche (CNR) Via del Fosso del Cavaliere 100 Rome 00133 ItalyInstitute for Microelectronics and Microsystems (IMM) Consiglio Nazionale delle Ricerche (CNR) Via del Fosso del Cavaliere 100 Rome 00133 ItalyDepartment of Physics University of Rome Tor Vergata Via della Ricerca Scientifica 1 Rome 00133 ItalyDepartment of Physics University of Rome Tor Vergata Via della Ricerca Scientifica 1 Rome 00133 ItalyDepartment of Industrial Engineering University of Rome Tor Vergata Via del Politecnico 1 Rome 00133 ItalyInstitute for Microelectronics and Microsystems (IMM) Consiglio Nazionale delle Ricerche (CNR) Via del Fosso del Cavaliere 100 Rome 00133 ItalyDepartment of Physics University of Rome Tor Vergata Via della Ricerca Scientifica 1 Rome 00133 ItalyInstitute for Microelectronics and Microsystems (IMM) Consiglio Nazionale delle Ricerche (CNR) Via del Fosso del Cavaliere 100 Rome 00133 ItalyDepartment of Physics University of Rome Tor Vergata Via della Ricerca Scientifica 1 Rome 00133 ItalyInstitute for Microelectronics and Microsystems (IMM) Consiglio Nazionale delle Ricerche (CNR) Via del Fosso del Cavaliere 100 Rome 00133 ItalyAbstract Edge computing architectures are intended to store and process data nearby the sensor, while ensuring fast and safe data processing, low power consumption and cost minimization. The stability, mechanical flexibility, huge computational and storage requirements needed for these applications are beyond the capability of current embedded devices. Memories based on phase‐change materials have the potential to overcome these issues. However, their behavior on flexible substrates is yet to be understood and alloys owning the required key features still need to be proposed. With this work, it is demonstrated that Ge–Sb–Te (GST) alloys are large‐area scalable and directly processable on flexible substrates, while their large resistance contrast enables the prospect of multilevel data encoding. Remarkably, the Ge enrichment acts as both thermal and mechanical stabilizer within the alloy. The highlighted features of Ge‐enriched GST alloys show their potential as new active materials for the most demanding flexible edge electronics applications.https://doi.org/10.1002/aelm.202400184edge electronicsflexible electronicsGe‐rich alloysGe–Sb–Te (GST)phase‐change materials (PCM) |
| spellingShingle | Sabrina Calvi Marco Bertelli Sara De Simone Francesco Maita Simone Prili Adriano Diaz Fattorini Fabio De Matteis Valentina Mussi Flavia Righi Riva Massimo Longo Fabrizio Arciprete Raffaella Calarco Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics Advanced Electronic Materials edge electronics flexible electronics Ge‐rich alloys Ge–Sb–Te (GST) phase‐change materials (PCM) |
| title | Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics |
| title_full | Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics |
| title_fullStr | Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics |
| title_full_unstemmed | Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics |
| title_short | Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics |
| title_sort | ge enrichment of ge sb te alloys as keystone of flexible edge electronics |
| topic | edge electronics flexible electronics Ge‐rich alloys Ge–Sb–Te (GST) phase‐change materials (PCM) |
| url | https://doi.org/10.1002/aelm.202400184 |
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