Study on the Electro-Fenton Chemomechanical Removal Behavior in Single-Crystal GaN Pin–Disk Friction Wear Experiments
Electro-Fenton chemical mechanical polishing primarily regulates the generation of hydroxyl radicals (·OH) via the Fenton reaction through an applied electric field, which subsequently influences the formation and removal of the oxide layer on the workpiece surface, thereby impacting the overall pol...
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| Main Authors: | Yangting Ou, Zhuoshan Shen, Juze Xie, Jisheng Pan |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-02-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/16/2/210 |
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