Study on the Electro-Fenton Chemomechanical Removal Behavior in Single-Crystal GaN Pin–Disk Friction Wear Experiments
Electro-Fenton chemical mechanical polishing primarily regulates the generation of hydroxyl radicals (·OH) via the Fenton reaction through an applied electric field, which subsequently influences the formation and removal of the oxide layer on the workpiece surface, thereby impacting the overall pol...
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MDPI AG
2025-02-01
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| Online Access: | https://www.mdpi.com/2072-666X/16/2/210 |
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| author | Yangting Ou Zhuoshan Shen Juze Xie Jisheng Pan |
| author_facet | Yangting Ou Zhuoshan Shen Juze Xie Jisheng Pan |
| author_sort | Yangting Ou |
| collection | DOAJ |
| description | Electro-Fenton chemical mechanical polishing primarily regulates the generation of hydroxyl radicals (·OH) via the Fenton reaction through an applied electric field, which subsequently influences the formation and removal of the oxide layer on the workpiece surface, thereby impacting the overall polishing quality and rate. This study employs Pin–Disk friction and wear experiments to investigate the material removal behavior of single-crystal GaN during electro-Fenton chemical mechanical polishing. Utilizing a range of analytical techniques, including coefficient of friction (COF) curves, surface morphology assessments, cross-sectional analysis, and power spectral density (PSD) measurements on the workpiece surface, we examine the influence of abrasives, polishing pads, polishing pressure, and other parameters on the electro-Fenton chemical–mechanical material removal process. Furthermore, this research provides preliminary insights into the synergistic removal mechanisms associated with the electro-Fenton chemical–mechanical action in single-crystal GaN. The experimental results indicate that optimal mechanical removal occurs when using a W0.5 diamond at a concentration of 1.5 wt% combined with a urethane pad (SH-Q13K-600) under a pressure of 0.2242 MPa. |
| format | Article |
| id | doaj-art-6fe972704acc431b808bea2036b04e79 |
| institution | DOAJ |
| issn | 2072-666X |
| language | English |
| publishDate | 2025-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj-art-6fe972704acc431b808bea2036b04e792025-08-20T03:12:22ZengMDPI AGMicromachines2072-666X2025-02-0116221010.3390/mi16020210Study on the Electro-Fenton Chemomechanical Removal Behavior in Single-Crystal GaN Pin–Disk Friction Wear ExperimentsYangting Ou0Zhuoshan Shen1Juze Xie2Jisheng Pan3School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, ChinaSchool of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, ChinaSchool of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, ChinaSchool of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, ChinaElectro-Fenton chemical mechanical polishing primarily regulates the generation of hydroxyl radicals (·OH) via the Fenton reaction through an applied electric field, which subsequently influences the formation and removal of the oxide layer on the workpiece surface, thereby impacting the overall polishing quality and rate. This study employs Pin–Disk friction and wear experiments to investigate the material removal behavior of single-crystal GaN during electro-Fenton chemical mechanical polishing. Utilizing a range of analytical techniques, including coefficient of friction (COF) curves, surface morphology assessments, cross-sectional analysis, and power spectral density (PSD) measurements on the workpiece surface, we examine the influence of abrasives, polishing pads, polishing pressure, and other parameters on the electro-Fenton chemical–mechanical material removal process. Furthermore, this research provides preliminary insights into the synergistic removal mechanisms associated with the electro-Fenton chemical–mechanical action in single-crystal GaN. The experimental results indicate that optimal mechanical removal occurs when using a W0.5 diamond at a concentration of 1.5 wt% combined with a urethane pad (SH-Q13K-600) under a pressure of 0.2242 MPa.https://www.mdpi.com/2072-666X/16/2/210single crystal GaNchemical mechanical polishingelectro-Fentonfriction and wear |
| spellingShingle | Yangting Ou Zhuoshan Shen Juze Xie Jisheng Pan Study on the Electro-Fenton Chemomechanical Removal Behavior in Single-Crystal GaN Pin–Disk Friction Wear Experiments Micromachines single crystal GaN chemical mechanical polishing electro-Fenton friction and wear |
| title | Study on the Electro-Fenton Chemomechanical Removal Behavior in Single-Crystal GaN Pin–Disk Friction Wear Experiments |
| title_full | Study on the Electro-Fenton Chemomechanical Removal Behavior in Single-Crystal GaN Pin–Disk Friction Wear Experiments |
| title_fullStr | Study on the Electro-Fenton Chemomechanical Removal Behavior in Single-Crystal GaN Pin–Disk Friction Wear Experiments |
| title_full_unstemmed | Study on the Electro-Fenton Chemomechanical Removal Behavior in Single-Crystal GaN Pin–Disk Friction Wear Experiments |
| title_short | Study on the Electro-Fenton Chemomechanical Removal Behavior in Single-Crystal GaN Pin–Disk Friction Wear Experiments |
| title_sort | study on the electro fenton chemomechanical removal behavior in single crystal gan pin disk friction wear experiments |
| topic | single crystal GaN chemical mechanical polishing electro-Fenton friction and wear |
| url | https://www.mdpi.com/2072-666X/16/2/210 |
| work_keys_str_mv | AT yangtingou studyontheelectrofentonchemomechanicalremovalbehaviorinsinglecrystalganpindiskfrictionwearexperiments AT zhuoshanshen studyontheelectrofentonchemomechanicalremovalbehaviorinsinglecrystalganpindiskfrictionwearexperiments AT juzexie studyontheelectrofentonchemomechanicalremovalbehaviorinsinglecrystalganpindiskfrictionwearexperiments AT jishengpan studyontheelectrofentonchemomechanicalremovalbehaviorinsinglecrystalganpindiskfrictionwearexperiments |