The Structure and Heat Dependence of Silicon Spreading Resistance Temperature Sensors
The construction method of the sensor SRTS with two roundshaped diffusion layers is given. The effect of geometry on the sensor resistance is determined theoretically. An approximating method is given to determine the temperature dependence of the sensor in the range of 200K < T < 400K. Calcul...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
1989-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1989/43536 |
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