The Structure and Heat Dependence of Silicon Spreading Resistance Temperature Sensors
The construction method of the sensor SRTS with two roundshaped diffusion layers is given. The effect of geometry on the sensor resistance is determined theoretically. An approximating method is given to determine the temperature dependence of the sensor in the range of 200K < T < 400K. Calcul...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
1989-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1989/43536 |
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| _version_ | 1850222748464316416 |
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| author | Gy. Pásztor J. Berkecz N. M. Ficza |
| author_facet | Gy. Pásztor J. Berkecz N. M. Ficza |
| author_sort | Gy. Pásztor |
| collection | DOAJ |
| description | The construction method of the sensor SRTS with two roundshaped diffusion layers is given.
The effect of geometry on the sensor resistance is determined theoretically. An approximating
method is given to determine the temperature dependence of the sensor in the range of
200K < T < 400K. Calculated results are compared to measurements. |
| format | Article |
| id | doaj-art-6fa4f0fa6d944b2e834cbf00353f1f89 |
| institution | OA Journals |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 1989-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-6fa4f0fa6d944b2e834cbf00353f1f892025-08-20T02:06:13ZengWileyActive and Passive Electronic Components0882-75161563-50311989-01-0113423724810.1155/1989/43536The Structure and Heat Dependence of Silicon Spreading Resistance Temperature SensorsGy. Pásztor0J. Berkecz1N. M. Ficza2MEV Microelectronics Co., P.O.B. 21., Budapest H-1325, HungaryMEV Microelectronics Co., P.O.B. 21., Budapest H-1325, HungaryMEV Microelectronics Co., P.O.B. 21., Budapest H-1325, HungaryThe construction method of the sensor SRTS with two roundshaped diffusion layers is given. The effect of geometry on the sensor resistance is determined theoretically. An approximating method is given to determine the temperature dependence of the sensor in the range of 200K < T < 400K. Calculated results are compared to measurements.http://dx.doi.org/10.1155/1989/43536 |
| spellingShingle | Gy. Pásztor J. Berkecz N. M. Ficza The Structure and Heat Dependence of Silicon Spreading Resistance Temperature Sensors Active and Passive Electronic Components |
| title | The Structure and Heat Dependence of Silicon Spreading Resistance Temperature Sensors |
| title_full | The Structure and Heat Dependence of Silicon Spreading Resistance Temperature Sensors |
| title_fullStr | The Structure and Heat Dependence of Silicon Spreading Resistance Temperature Sensors |
| title_full_unstemmed | The Structure and Heat Dependence of Silicon Spreading Resistance Temperature Sensors |
| title_short | The Structure and Heat Dependence of Silicon Spreading Resistance Temperature Sensors |
| title_sort | structure and heat dependence of silicon spreading resistance temperature sensors |
| url | http://dx.doi.org/10.1155/1989/43536 |
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