The Potential of Reactively RF Sputtered ZnO Thin Films for the Fabrication of Microwave Filters

The piezoelectric properties of reactively sputtered ZnO thin films deposited on glass and silicon substrates were studied in order to assess their potential for the construction of RF overmoded filters. Films of high crystallographic orientation {002}, as shown by XRD measurements and SEM observati...

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Main Authors: A. T. Kollias, E. D. Tsamis, J. N. Avaritsiotis
Format: Article
Language:English
Published: Wiley 2000-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1155/APEC.23.75
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author A. T. Kollias
E. D. Tsamis
J. N. Avaritsiotis
author_facet A. T. Kollias
E. D. Tsamis
J. N. Avaritsiotis
author_sort A. T. Kollias
collection DOAJ
description The piezoelectric properties of reactively sputtered ZnO thin films deposited on glass and silicon substrates were studied in order to assess their potential for the construction of RF overmoded filters. Films of high crystallographic orientation {002}, as shown by XRD measurements and SEM observations, and high value of keff2 , calculated with the aid of the BVD model, were obtained after the optimization of the deposition conditions, with highly repetitive properties. Simple devices were designed and constructed on silicon substrates which showed a quality factor of 1000 without the use of a Bragg acoustic reflector, and a temperature drift of –30ppm/℃.
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spelling doaj-art-6f82e4719f644c13a1fffae9fda0d7942025-08-20T02:06:15ZengWileyActive and Passive Electronic Components0882-75161563-50312000-01-01232759510.1155/APEC.23.75The Potential of Reactively RF Sputtered ZnO Thin Films for the Fabrication of Microwave FiltersA. T. Kollias0E. D. Tsamis1J. N. Avaritsiotis2Department of Electrical and Computer Engineering, National Technical University of Athens, 9, lroon Polytechniou St. Zografou, Athens 15773, GreeceDepartment of Electrical and Computer Engineering, National Technical University of Athens, 9, lroon Polytechniou St. Zografou, Athens 15773, GreeceDepartment of Electrical and Computer Engineering, National Technical University of Athens, 9, lroon Polytechniou St. Zografou, Athens 15773, GreeceThe piezoelectric properties of reactively sputtered ZnO thin films deposited on glass and silicon substrates were studied in order to assess their potential for the construction of RF overmoded filters. Films of high crystallographic orientation {002}, as shown by XRD measurements and SEM observations, and high value of keff2 , calculated with the aid of the BVD model, were obtained after the optimization of the deposition conditions, with highly repetitive properties. Simple devices were designed and constructed on silicon substrates which showed a quality factor of 1000 without the use of a Bragg acoustic reflector, and a temperature drift of –30ppm/℃.http://dx.doi.org/10.1155/APEC.23.75
spellingShingle A. T. Kollias
E. D. Tsamis
J. N. Avaritsiotis
The Potential of Reactively RF Sputtered ZnO Thin Films for the Fabrication of Microwave Filters
Active and Passive Electronic Components
title The Potential of Reactively RF Sputtered ZnO Thin Films for the Fabrication of Microwave Filters
title_full The Potential of Reactively RF Sputtered ZnO Thin Films for the Fabrication of Microwave Filters
title_fullStr The Potential of Reactively RF Sputtered ZnO Thin Films for the Fabrication of Microwave Filters
title_full_unstemmed The Potential of Reactively RF Sputtered ZnO Thin Films for the Fabrication of Microwave Filters
title_short The Potential of Reactively RF Sputtered ZnO Thin Films for the Fabrication of Microwave Filters
title_sort potential of reactively rf sputtered zno thin films for the fabrication of microwave filters
url http://dx.doi.org/10.1155/APEC.23.75
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