Influence of Multiple Trapping Phenomena on The Applications Criteria of ZnO-Bi2O3-Based Varistors
The performance characteristics of the ZnO-Bi2O3-based varistors can be assessed to meet the applications criteria on the basis of a systematic evaluation corresponding to various experimental conditions. This evaluation process employs the lumped parameter/complex plane analysis technique for the a...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
1994-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1994/61371 |
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| Summary: | The performance characteristics of the ZnO-Bi2O3-based varistors can be assessed to meet the applications
criteria on the basis of a systematic evaluation corresponding to various experimental conditions.
This evaluation process employs the lumped parameter/complex plane analysis technique for the ac
small-signal immittance data. An overall behavior of these devices is attributed to the microstructural
effects via controlled grain-size and its distribution, existence of phases, carrier density in the grains,
trapping states, and their role within the electrical thickness across the grain-boundary electrical barrier,
etc. These factors are strongly dictated by the additives to ZnO in conjunction with the processing
variables. Multiple device functions can result when a single set from a variety of processing parameters
is chosen, provided the starting chemistry or composition/formulation remain invariant. The factors
related to materials' history, composition recipe, and combined processing methods influence or modify
relative magnitudes of the constituting elements of each trapping relaxation. Thus, these magnitudes
either increase or decrease the visibility without distorting the devices' generic dielectric behavior. An
identical set of experiments contributes to distinguish a good varistor performance over a poor response
for surge arrester (i.e., suppressor/absorber) applications in the power systems' transient protection. |
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| ISSN: | 0882-7516 1563-5031 |