Damage effects in GaN high electron mobility transistor power amplifier induced by high power microwave pulses
Abstract As the electromagnetic environment becomes increasingly complex and power density continues to increase, the reliability and safe operation of gallium nitride (GaN) high electron mobility transistors (HEMTs), which are widely used in the field of high-power radio frequency amplifiers, are s...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-02-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-025-89938-6 |
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