Recent advancements in metal oxide‐based hybrid nanocomposite resistive random‐access memories for artificial intelligence
Abstract Artificial intelligence (AI) advancements are driving the need for highly parallel and energy‐efficient computing analogous to the human brain and visual system. Inspired by the human brain, resistive random‐access memories (ReRAMs) have recently emerged as an essential component of the int...
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Wiley
2025-03-01
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| Online Access: | https://doi.org/10.1002/inf2.12644 |
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| author | Anirudh Kumar Kirti Bhardwaj Satendra Pal Singh Youngmin Lee Sejoon Lee Mohit Kumar Sanjeev K. Sharma |
| author_facet | Anirudh Kumar Kirti Bhardwaj Satendra Pal Singh Youngmin Lee Sejoon Lee Mohit Kumar Sanjeev K. Sharma |
| author_sort | Anirudh Kumar |
| collection | DOAJ |
| description | Abstract Artificial intelligence (AI) advancements are driving the need for highly parallel and energy‐efficient computing analogous to the human brain and visual system. Inspired by the human brain, resistive random‐access memories (ReRAMs) have recently emerged as an essential component of the intelligent circuitry architecture for developing high‐performance neuromorphic computing systems. This occurs due to their fast switching with ultralow power consumption, high ON/OFF ratio, excellent data retention, good endurance, and even great possibilities for altering resistance analogous to their biological counterparts for neuromorphic computing applications. Additionally, with the advantages of photoelectric dual modulation of resistive switching, ReRAMs allow optically inspired artificial neural networks and reconfigurable logic operations, promoting innovative in‐memory computing technology for neuromorphic computing and image recognition tasks. Optoelectronic neuromorphic computing architectured ReRAMs can simulate neural functionalities, such as light‐triggered long‐term/short‐term plasticity. They can be used in intelligent robotics and bionic neurological optoelectronic systems. Metal oxide (MOx)–polymer hybrid nanocomposites can be beneficial as an active layer of the bistable metal–insulator–metal ReRAM devices, which hold promise for developing high‐performance memory technology. This review explores the state of the art for developing memory storage, advancement in materials, and switching mechanisms for selecting the appropriate materials as active layers of ReRAMs to boost the ON/OFF ratio, flexibility, and memory density while lowering programming voltage. Furthermore, material design cum‐synthesis strategies that greatly influence the overall performance of MOx–polymer hybrid nanocomposite ReRAMs and their performances are highlighted. Additionally, the recent progress of multifunctional optoelectronic MOx–polymer hybrid composites‐based ReRAMs are explored as artificial synapses for neural networks to emulate neuromorphic visualization and memorize information. Finally, the challenges, limitations, and future outlooks of the fabrication of MOx–polymer hybrid composite ReRAMs over the conventional von Neumann computing systems are discussed. |
| format | Article |
| id | doaj-art-6f15fbc3958a45f4b1f170fb424f7b2c |
| institution | DOAJ |
| issn | 2567-3165 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Wiley |
| record_format | Article |
| series | InfoMat |
| spelling | doaj-art-6f15fbc3958a45f4b1f170fb424f7b2c2025-08-20T02:41:37ZengWileyInfoMat2567-31652025-03-0173n/an/a10.1002/inf2.12644Recent advancements in metal oxide‐based hybrid nanocomposite resistive random‐access memories for artificial intelligenceAnirudh Kumar0Kirti Bhardwaj1Satendra Pal Singh2Youngmin Lee3Sejoon Lee4Mohit Kumar5Sanjeev K. Sharma6Biomaterials and Sensor Laboratory, Department of Physics Chaudhary Charan Singh University Meerut IndiaBiomaterials and Sensor Laboratory, Department of Physics Chaudhary Charan Singh University Meerut IndiaDepartment of Physics SSV College (Affl. Chaudhary Charan Singh University) Hapur IndiaDivision of System Semiconductor Dongguk University‐Seoul Seoul Republic of KoreaDivision of System Semiconductor Dongguk University‐Seoul Seoul Republic of KoreaDepartment of Energy Systems Research Ajou University Suwon Republic of KoreaBiomaterials and Sensor Laboratory, Department of Physics Chaudhary Charan Singh University Meerut IndiaAbstract Artificial intelligence (AI) advancements are driving the need for highly parallel and energy‐efficient computing analogous to the human brain and visual system. Inspired by the human brain, resistive random‐access memories (ReRAMs) have recently emerged as an essential component of the intelligent circuitry architecture for developing high‐performance neuromorphic computing systems. This occurs due to their fast switching with ultralow power consumption, high ON/OFF ratio, excellent data retention, good endurance, and even great possibilities for altering resistance analogous to their biological counterparts for neuromorphic computing applications. Additionally, with the advantages of photoelectric dual modulation of resistive switching, ReRAMs allow optically inspired artificial neural networks and reconfigurable logic operations, promoting innovative in‐memory computing technology for neuromorphic computing and image recognition tasks. Optoelectronic neuromorphic computing architectured ReRAMs can simulate neural functionalities, such as light‐triggered long‐term/short‐term plasticity. They can be used in intelligent robotics and bionic neurological optoelectronic systems. Metal oxide (MOx)–polymer hybrid nanocomposites can be beneficial as an active layer of the bistable metal–insulator–metal ReRAM devices, which hold promise for developing high‐performance memory technology. This review explores the state of the art for developing memory storage, advancement in materials, and switching mechanisms for selecting the appropriate materials as active layers of ReRAMs to boost the ON/OFF ratio, flexibility, and memory density while lowering programming voltage. Furthermore, material design cum‐synthesis strategies that greatly influence the overall performance of MOx–polymer hybrid nanocomposite ReRAMs and their performances are highlighted. Additionally, the recent progress of multifunctional optoelectronic MOx–polymer hybrid composites‐based ReRAMs are explored as artificial synapses for neural networks to emulate neuromorphic visualization and memorize information. Finally, the challenges, limitations, and future outlooks of the fabrication of MOx–polymer hybrid composite ReRAMs over the conventional von Neumann computing systems are discussed.https://doi.org/10.1002/inf2.12644memory capacitymetal oxide–polymer nanocompositesmultifunctional artificial synapseoptoelectronic ReRAMswitching mechanism |
| spellingShingle | Anirudh Kumar Kirti Bhardwaj Satendra Pal Singh Youngmin Lee Sejoon Lee Mohit Kumar Sanjeev K. Sharma Recent advancements in metal oxide‐based hybrid nanocomposite resistive random‐access memories for artificial intelligence InfoMat memory capacity metal oxide–polymer nanocomposites multifunctional artificial synapse optoelectronic ReRAM switching mechanism |
| title | Recent advancements in metal oxide‐based hybrid nanocomposite resistive random‐access memories for artificial intelligence |
| title_full | Recent advancements in metal oxide‐based hybrid nanocomposite resistive random‐access memories for artificial intelligence |
| title_fullStr | Recent advancements in metal oxide‐based hybrid nanocomposite resistive random‐access memories for artificial intelligence |
| title_full_unstemmed | Recent advancements in metal oxide‐based hybrid nanocomposite resistive random‐access memories for artificial intelligence |
| title_short | Recent advancements in metal oxide‐based hybrid nanocomposite resistive random‐access memories for artificial intelligence |
| title_sort | recent advancements in metal oxide based hybrid nanocomposite resistive random access memories for artificial intelligence |
| topic | memory capacity metal oxide–polymer nanocomposites multifunctional artificial synapse optoelectronic ReRAM switching mechanism |
| url | https://doi.org/10.1002/inf2.12644 |
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