Magnetism control of thin CoFeB layers by ferroelectric polarization

Nonvolatile and reversible control of perpendicular magnetic properties of thin Co _0.2 Fe _0.6 B _0.2 layers formed on a MgO layer was demonstrated by ferroelectric switching of the stacked Al _0.88 Sc _0.12 N and Ta _2 O _5 layers. A change in the coercivity ( H _c ) of the 1.3-nm-thick Co _0.2 Fe...

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Bibliographic Details
Main Authors: Yan Wu, Kazushi Onimura, Hiroyuki Kobayashi, Satoshi Okamoto, Kuniyuki Kakushima
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Applied Physics Express
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Online Access:https://doi.org/10.35848/1882-0786/adbf65
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Summary:Nonvolatile and reversible control of perpendicular magnetic properties of thin Co _0.2 Fe _0.6 B _0.2 layers formed on a MgO layer was demonstrated by ferroelectric switching of the stacked Al _0.88 Sc _0.12 N and Ta _2 O _5 layers. A change in the coercivity ( H _c ) of the 1.3-nm-thick Co _0.2 Fe _0.6 B _0.2 layer from 30 to 141 Oe was confirmed by depleting electrons at the interface, modifying the magnetic domain wall energy. Saturation magnetization showed a slight decrease toward depletion condition, presumably presenting a dead layer at the interface. The ferroelectric polarization-induced control of magnetism has high potential for magnetic memory applications.
ISSN:1882-0786