Oxygen vacancy-controlled forming-free bipolar resistive switching in Er-doped ZnO memristor
Zinc oxide (ZnO) is widely employed for multifunctional applications, including memristors, and has garnered substantial interest for its potential applications in next-generation integrated memory and neuromorphic computing. However, previous ZnO based memristor device studies have shown unsatisfac...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-01-01
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| Series: | Applied Surface Science Advances |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S266652392400103X |
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