Oxygen vacancy-controlled forming-free bipolar resistive switching in Er-doped ZnO memristor
Zinc oxide (ZnO) is widely employed for multifunctional applications, including memristors, and has garnered substantial interest for its potential applications in next-generation integrated memory and neuromorphic computing. However, previous ZnO based memristor device studies have shown unsatisfac...
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| Format: | Article |
| Language: | English |
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Elsevier
2025-01-01
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| Series: | Applied Surface Science Advances |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S266652392400103X |
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| author | Akendra Singh Chabungbam Dong-eun Kim Yue Wang Kyung-Mun Kang Minjae Kim Hyung-Ho Park |
| author_facet | Akendra Singh Chabungbam Dong-eun Kim Yue Wang Kyung-Mun Kang Minjae Kim Hyung-Ho Park |
| author_sort | Akendra Singh Chabungbam |
| collection | DOAJ |
| description | Zinc oxide (ZnO) is widely employed for multifunctional applications, including memristors, and has garnered substantial interest for its potential applications in next-generation integrated memory and neuromorphic computing. However, previous ZnO based memristor device studies have shown unsatisfactory performance, due to the large number of defects and low crystallinity in ZnO films deposited through several methods. This study proposes a method to modulate oxygen vacancies by doping, and subsequently confirms optimum defects at 0.14 at % Er doping. A highly crystalline Er doped ZnO (EZO) film was prepared using sputtering at room temperature for utilization as a resistive switching layer for a memristor device prepared on a transparent ITO substrate. The prepared memristor exhibited excellent forming-less uniform switching performance with endurance exceeding 104 cycles and stable retention for 107 s. Forming-free resistive switching in this device was driven by an interface type model to modulate oxygen vacancies. The remarkable EZO memristor switching characteristics suggests outstanding potential for next generation memory applications with remarkable stability, reproducibility, and reliability. |
| format | Article |
| id | doaj-art-6ecc219669074e338da2e97e5c822534 |
| institution | Kabale University |
| issn | 2666-5239 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Applied Surface Science Advances |
| spelling | doaj-art-6ecc219669074e338da2e97e5c8225342025-01-29T05:02:05ZengElsevierApplied Surface Science Advances2666-52392025-01-0125100675Oxygen vacancy-controlled forming-free bipolar resistive switching in Er-doped ZnO memristorAkendra Singh Chabungbam0Dong-eun Kim1Yue Wang2Kyung-Mun Kang3Minjae Kim4Hyung-Ho Park5Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of KoreaDepartment of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of KoreaDepartment of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of KoreaDepartment of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of KoreaSchool of Materials Science and Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea; Corresponding author.Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea; Aerogel Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea; Corresponding author at: Aerogel Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea.Zinc oxide (ZnO) is widely employed for multifunctional applications, including memristors, and has garnered substantial interest for its potential applications in next-generation integrated memory and neuromorphic computing. However, previous ZnO based memristor device studies have shown unsatisfactory performance, due to the large number of defects and low crystallinity in ZnO films deposited through several methods. This study proposes a method to modulate oxygen vacancies by doping, and subsequently confirms optimum defects at 0.14 at % Er doping. A highly crystalline Er doped ZnO (EZO) film was prepared using sputtering at room temperature for utilization as a resistive switching layer for a memristor device prepared on a transparent ITO substrate. The prepared memristor exhibited excellent forming-less uniform switching performance with endurance exceeding 104 cycles and stable retention for 107 s. Forming-free resistive switching in this device was driven by an interface type model to modulate oxygen vacancies. The remarkable EZO memristor switching characteristics suggests outstanding potential for next generation memory applications with remarkable stability, reproducibility, and reliability.http://www.sciencedirect.com/science/article/pii/S266652392400103XOxygen vacancyRare-earth doped znoInterface type resistive switching |
| spellingShingle | Akendra Singh Chabungbam Dong-eun Kim Yue Wang Kyung-Mun Kang Minjae Kim Hyung-Ho Park Oxygen vacancy-controlled forming-free bipolar resistive switching in Er-doped ZnO memristor Applied Surface Science Advances Oxygen vacancy Rare-earth doped zno Interface type resistive switching |
| title | Oxygen vacancy-controlled forming-free bipolar resistive switching in Er-doped ZnO memristor |
| title_full | Oxygen vacancy-controlled forming-free bipolar resistive switching in Er-doped ZnO memristor |
| title_fullStr | Oxygen vacancy-controlled forming-free bipolar resistive switching in Er-doped ZnO memristor |
| title_full_unstemmed | Oxygen vacancy-controlled forming-free bipolar resistive switching in Er-doped ZnO memristor |
| title_short | Oxygen vacancy-controlled forming-free bipolar resistive switching in Er-doped ZnO memristor |
| title_sort | oxygen vacancy controlled forming free bipolar resistive switching in er doped zno memristor |
| topic | Oxygen vacancy Rare-earth doped zno Interface type resistive switching |
| url | http://www.sciencedirect.com/science/article/pii/S266652392400103X |
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