The enhanced ferroelectric properties of flexible Hf0.85Ce0.15O2 thin films based on in situ stress regulation
Abstract As the core component of ferroelectric memories, HfO2-based ferroelectric thin films play a crucial role in achieving their excellent storage performance. Here, we improved the ferroelectric properties and domain switching properties through in situ stress loading during annealing. The thin...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-01-01
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| Series: | npj Flexible Electronics |
| Online Access: | https://doi.org/10.1038/s41528-025-00379-7 |
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