The enhanced ferroelectric properties of flexible Hf0.85Ce0.15O2 thin films based on in situ stress regulation
Abstract As the core component of ferroelectric memories, HfO2-based ferroelectric thin films play a crucial role in achieving their excellent storage performance. Here, we improved the ferroelectric properties and domain switching properties through in situ stress loading during annealing. The thin...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-01-01
|
| Series: | npj Flexible Electronics |
| Online Access: | https://doi.org/10.1038/s41528-025-00379-7 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832571171314335744 |
|---|---|
| author | Jinglin Pang Tianpeng Duan Min Liao Limei Jiang Yichun Zhou Qiong Yang Jiajia Liao Jie Jiang |
| author_facet | Jinglin Pang Tianpeng Duan Min Liao Limei Jiang Yichun Zhou Qiong Yang Jiajia Liao Jie Jiang |
| author_sort | Jinglin Pang |
| collection | DOAJ |
| description | Abstract As the core component of ferroelectric memories, HfO2-based ferroelectric thin films play a crucial role in achieving their excellent storage performance. Here, we improved the ferroelectric properties and domain switching properties through in situ stress loading during annealing. The thin films are annealed under different bending states by applying different stress actions, and it is observed that, within a certain range of stress bending, the optimization of the ferroelectric properties of the annealed thin films can reach an extreme value. Specifically, under the influence of a small electric field, the 2P r values of thin films annealed at +10 and −10 mm increased by 87.1% and 71.1%, respectively, compared with the unbent films. Additionally, these thin films exhibit extremely high domain wall mobility and excellent domain switching capabilities. Once the ferroelectric phase is formed through in situ stress modulation, it remains stable even under multiple service environments. |
| format | Article |
| id | doaj-art-6e3e89cbf3984623b19aa320ebe9fc78 |
| institution | Kabale University |
| issn | 2397-4621 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj Flexible Electronics |
| spelling | doaj-art-6e3e89cbf3984623b19aa320ebe9fc782025-02-02T12:47:24ZengNature Portfolionpj Flexible Electronics2397-46212025-01-019111010.1038/s41528-025-00379-7The enhanced ferroelectric properties of flexible Hf0.85Ce0.15O2 thin films based on in situ stress regulationJinglin Pang0Tianpeng Duan1Min Liao2Limei Jiang3Yichun Zhou4Qiong Yang5Jiajia Liao6Jie Jiang7Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan UniversityHunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan UniversityHunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan UniversityHunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan UniversitySchool of Advanced Materials and Nanotechnology, Xidian UniversityHunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan UniversitySchool of Advanced Materials and Nanotechnology, Xidian UniversityHunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan UniversityAbstract As the core component of ferroelectric memories, HfO2-based ferroelectric thin films play a crucial role in achieving their excellent storage performance. Here, we improved the ferroelectric properties and domain switching properties through in situ stress loading during annealing. The thin films are annealed under different bending states by applying different stress actions, and it is observed that, within a certain range of stress bending, the optimization of the ferroelectric properties of the annealed thin films can reach an extreme value. Specifically, under the influence of a small electric field, the 2P r values of thin films annealed at +10 and −10 mm increased by 87.1% and 71.1%, respectively, compared with the unbent films. Additionally, these thin films exhibit extremely high domain wall mobility and excellent domain switching capabilities. Once the ferroelectric phase is formed through in situ stress modulation, it remains stable even under multiple service environments.https://doi.org/10.1038/s41528-025-00379-7 |
| spellingShingle | Jinglin Pang Tianpeng Duan Min Liao Limei Jiang Yichun Zhou Qiong Yang Jiajia Liao Jie Jiang The enhanced ferroelectric properties of flexible Hf0.85Ce0.15O2 thin films based on in situ stress regulation npj Flexible Electronics |
| title | The enhanced ferroelectric properties of flexible Hf0.85Ce0.15O2 thin films based on in situ stress regulation |
| title_full | The enhanced ferroelectric properties of flexible Hf0.85Ce0.15O2 thin films based on in situ stress regulation |
| title_fullStr | The enhanced ferroelectric properties of flexible Hf0.85Ce0.15O2 thin films based on in situ stress regulation |
| title_full_unstemmed | The enhanced ferroelectric properties of flexible Hf0.85Ce0.15O2 thin films based on in situ stress regulation |
| title_short | The enhanced ferroelectric properties of flexible Hf0.85Ce0.15O2 thin films based on in situ stress regulation |
| title_sort | enhanced ferroelectric properties of flexible hf0 85ce0 15o2 thin films based on in situ stress regulation |
| url | https://doi.org/10.1038/s41528-025-00379-7 |
| work_keys_str_mv | AT jinglinpang theenhancedferroelectricpropertiesofflexiblehf085ce015o2thinfilmsbasedoninsitustressregulation AT tianpengduan theenhancedferroelectricpropertiesofflexiblehf085ce015o2thinfilmsbasedoninsitustressregulation AT minliao theenhancedferroelectricpropertiesofflexiblehf085ce015o2thinfilmsbasedoninsitustressregulation AT limeijiang theenhancedferroelectricpropertiesofflexiblehf085ce015o2thinfilmsbasedoninsitustressregulation AT yichunzhou theenhancedferroelectricpropertiesofflexiblehf085ce015o2thinfilmsbasedoninsitustressregulation AT qiongyang theenhancedferroelectricpropertiesofflexiblehf085ce015o2thinfilmsbasedoninsitustressregulation AT jiajialiao theenhancedferroelectricpropertiesofflexiblehf085ce015o2thinfilmsbasedoninsitustressregulation AT jiejiang theenhancedferroelectricpropertiesofflexiblehf085ce015o2thinfilmsbasedoninsitustressregulation AT jinglinpang enhancedferroelectricpropertiesofflexiblehf085ce015o2thinfilmsbasedoninsitustressregulation AT tianpengduan enhancedferroelectricpropertiesofflexiblehf085ce015o2thinfilmsbasedoninsitustressregulation AT minliao enhancedferroelectricpropertiesofflexiblehf085ce015o2thinfilmsbasedoninsitustressregulation AT limeijiang enhancedferroelectricpropertiesofflexiblehf085ce015o2thinfilmsbasedoninsitustressregulation AT yichunzhou enhancedferroelectricpropertiesofflexiblehf085ce015o2thinfilmsbasedoninsitustressregulation AT qiongyang enhancedferroelectricpropertiesofflexiblehf085ce015o2thinfilmsbasedoninsitustressregulation AT jiajialiao enhancedferroelectricpropertiesofflexiblehf085ce015o2thinfilmsbasedoninsitustressregulation AT jiejiang enhancedferroelectricpropertiesofflexiblehf085ce015o2thinfilmsbasedoninsitustressregulation |