Bulk Defects Passivation of Tin Halide Perovskite by Tin Thiocyanate
ABSTRACT Despite the rapid efficiency increase, tin halide perovskite solar cells are significantly behind their lead‐based counterpart, with the highest reported efficiency of 15.38%. The main reason for this large difference is attributed to the instability of Sn2+, which easily oxidizes to Sn4+,...
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| Format: | Article |
| Language: | English |
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Wiley
2025-06-01
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| Series: | Carbon Energy |
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| Online Access: | https://doi.org/10.1002/cey2.710 |
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| author | Matteo Pitaro Lorenzo Di Mario Jacopo Pinna Diego A. Acevedo‐Guzmán Marios Neophytou Mindaugas Kirkus Thomas D. Anthopoulos Giuseppe Portale Petra Rudolf Maria Antonietta Loi |
| author_facet | Matteo Pitaro Lorenzo Di Mario Jacopo Pinna Diego A. Acevedo‐Guzmán Marios Neophytou Mindaugas Kirkus Thomas D. Anthopoulos Giuseppe Portale Petra Rudolf Maria Antonietta Loi |
| author_sort | Matteo Pitaro |
| collection | DOAJ |
| description | ABSTRACT Despite the rapid efficiency increase, tin halide perovskite solar cells are significantly behind their lead‐based counterpart, with the highest reported efficiency of 15.38%. The main reason for this large difference is attributed to the instability of Sn2+, which easily oxidizes to Sn4+, creating Sn vacancies and increasing the open‐circuit voltage loss. In this work, we implemented tin thiocyanate (Sn(SCN)2) as an additive for passivating the bulk defects of a germanium‐doped tin halide perovskite film. Adding Sn2+ and SCN− ions reduces the Sn and iodine vacancies, limiting non‐radiative recombination and favoring longer charge‐carrier dynamics. Moreover, the addition of Sn(SCN)2 induces a higher film crystallinity and preferential orientation of the (l00) planes parallel to the substrate. The passivated devices showed improved photovoltaic parameters with the best open‐circuit voltage of 0.716 V and the best efficiency of 12.22%, compared to 0.647 V and 10.2% for the reference device. In addition, the passivated solar cell retains 88.7% of its initial efficiency after 80 min of illumination under 100 mW cm‐2 and is substantially better than the control device, which reaches 82.6% of its initial power conversion efficiency only after 30 min. This work demonstrates the passivation potential of tin‐based additives, which combined with different counterions give a relatively large space of choices for passivation of Sn‐based perovskites. |
| format | Article |
| id | doaj-art-6e2b98ddffe14b37af7d1689aaaafd8b |
| institution | Kabale University |
| issn | 2637-9368 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Wiley |
| record_format | Article |
| series | Carbon Energy |
| spelling | doaj-art-6e2b98ddffe14b37af7d1689aaaafd8b2025-08-20T03:27:51ZengWileyCarbon Energy2637-93682025-06-0176n/an/a10.1002/cey2.710Bulk Defects Passivation of Tin Halide Perovskite by Tin ThiocyanateMatteo Pitaro0Lorenzo Di Mario1Jacopo Pinna2Diego A. Acevedo‐Guzmán3Marios Neophytou4Mindaugas Kirkus5Thomas D. Anthopoulos6Giuseppe Portale7Petra Rudolf8Maria Antonietta Loi9Zernike Institute for Advanced Materials University of Groningen AG Groningen The NetherlandsZernike Institute for Advanced Materials University of Groningen AG Groningen The NetherlandsZernike Institute for Advanced Materials University of Groningen AG Groningen The NetherlandsZernike Institute for Advanced Materials University of Groningen AG Groningen The NetherlandsPhysical Science and Engineering Division King Abdullah University of Science and Technology Thuwal Kingdom of Saudi ArabiaPhysical Science and Engineering Division King Abdullah University of Science and Technology Thuwal Kingdom of Saudi ArabiaDepartment of Electrical and Electronic Engineering, Henry Royce Institute and Photon Science Institute The University of Manchester Manchester UKZernike Institute for Advanced Materials University of Groningen AG Groningen The NetherlandsZernike Institute for Advanced Materials University of Groningen AG Groningen The NetherlandsZernike Institute for Advanced Materials University of Groningen AG Groningen The NetherlandsABSTRACT Despite the rapid efficiency increase, tin halide perovskite solar cells are significantly behind their lead‐based counterpart, with the highest reported efficiency of 15.38%. The main reason for this large difference is attributed to the instability of Sn2+, which easily oxidizes to Sn4+, creating Sn vacancies and increasing the open‐circuit voltage loss. In this work, we implemented tin thiocyanate (Sn(SCN)2) as an additive for passivating the bulk defects of a germanium‐doped tin halide perovskite film. Adding Sn2+ and SCN− ions reduces the Sn and iodine vacancies, limiting non‐radiative recombination and favoring longer charge‐carrier dynamics. Moreover, the addition of Sn(SCN)2 induces a higher film crystallinity and preferential orientation of the (l00) planes parallel to the substrate. The passivated devices showed improved photovoltaic parameters with the best open‐circuit voltage of 0.716 V and the best efficiency of 12.22%, compared to 0.647 V and 10.2% for the reference device. In addition, the passivated solar cell retains 88.7% of its initial efficiency after 80 min of illumination under 100 mW cm‐2 and is substantially better than the control device, which reaches 82.6% of its initial power conversion efficiency only after 30 min. This work demonstrates the passivation potential of tin‐based additives, which combined with different counterions give a relatively large space of choices for passivation of Sn‐based perovskites.https://doi.org/10.1002/cey2.710additivessolar cellstin halide perovskitetin oxidationtin thiocyanatetrap passivation |
| spellingShingle | Matteo Pitaro Lorenzo Di Mario Jacopo Pinna Diego A. Acevedo‐Guzmán Marios Neophytou Mindaugas Kirkus Thomas D. Anthopoulos Giuseppe Portale Petra Rudolf Maria Antonietta Loi Bulk Defects Passivation of Tin Halide Perovskite by Tin Thiocyanate Carbon Energy additives solar cells tin halide perovskite tin oxidation tin thiocyanate trap passivation |
| title | Bulk Defects Passivation of Tin Halide Perovskite by Tin Thiocyanate |
| title_full | Bulk Defects Passivation of Tin Halide Perovskite by Tin Thiocyanate |
| title_fullStr | Bulk Defects Passivation of Tin Halide Perovskite by Tin Thiocyanate |
| title_full_unstemmed | Bulk Defects Passivation of Tin Halide Perovskite by Tin Thiocyanate |
| title_short | Bulk Defects Passivation of Tin Halide Perovskite by Tin Thiocyanate |
| title_sort | bulk defects passivation of tin halide perovskite by tin thiocyanate |
| topic | additives solar cells tin halide perovskite tin oxidation tin thiocyanate trap passivation |
| url | https://doi.org/10.1002/cey2.710 |
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