System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity
In this work, a system-technology co-optimization (STCO) of the AlGaN/GaN multimetal gated (MMG) HEMT architecture for third-order transconductance (gm3) engineering and linearity improvement in the presence of fermi-level pinning (FLP) is reported. Through technology computer-aided design (TCAD), c...
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2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10767716/ |
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| author | Toiyob Hossain Tanvir Hossain A. K. M. Anindya Alam Bejoy Sikder Qingyun Xie Mengyang Yuan Eiji Yagyu Koon Hoo Teo Tomas Palacios Nadim Chowdhury |
| author_facet | Toiyob Hossain Tanvir Hossain A. K. M. Anindya Alam Bejoy Sikder Qingyun Xie Mengyang Yuan Eiji Yagyu Koon Hoo Teo Tomas Palacios Nadim Chowdhury |
| author_sort | Toiyob Hossain |
| collection | DOAJ |
| description | In this work, a system-technology co-optimization (STCO) of the AlGaN/GaN multimetal gated (MMG) HEMT architecture for third-order transconductance (gm3) engineering and linearity improvement in the presence of fermi-level pinning (FLP) is reported. Through technology computer-aided design (TCAD), compact modeling, load-pull simulations and modulated signal simulations, it is shown that despite incorporating FLP, employing MMG scheme improves device level gm3 - suppression, leading to an improvement in output-referred third-order intercept point per unit dc power (OIP3/PDC) and third order intermodulation distortion (IMD3). Remarkably, OIP3/PDC of 18.9 dB is obtained considering an FLP factor of 0.43, which is a 10.7 dB improvement over the conventional HEMT. MMG HEMT exhibits an output-referred 1-dB compression point (P1-dB) of 3.60 W/mm, compared to 0.60 W/mm for the standard/conventional case. A comparative analysis on output power back-off (OBO) for conventional and MMG HEMT with different FLP factors establishes MMG as a robust architecture to FLP. Simulations involving 5G FR1 signals demonstrate that the adjacent channel power ratio (ACPR) is sustained below -40 dBc up to an output power of 20 dBm. 2.6% lower error vector magnitude (EVM) than baseline case is achieved by MMG HEMT at 5 GHz, under 100 MHz 64-QAM OFDM signals. |
| format | Article |
| id | doaj-art-6dff2e2cacfd4ae2b228ea6318b1d8fe |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-6dff2e2cacfd4ae2b228ea6318b1d8fe2025-08-20T03:45:06ZengIEEEIEEE Journal of the Electron Devices Society2168-67342025-01-011373073610.1109/JEDS.2024.350661810767716System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF LinearityToiyob Hossain0Tanvir Hossain1https://orcid.org/0009-0003-4440-8462A. K. M. Anindya Alam2https://orcid.org/0009-0005-4777-0752Bejoy Sikder3https://orcid.org/0000-0003-0648-1514Qingyun Xie4https://orcid.org/0000-0002-8368-1440Mengyang Yuan5https://orcid.org/0000-0003-2615-7623Eiji Yagyu6Koon Hoo Teo7Tomas Palacios8https://orcid.org/0000-0002-2190-563XNadim Chowdhury9https://orcid.org/0000-0002-3677-4556Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, BangladeshDepartment of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, BangladeshDepartment of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, BangladeshDepartment of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, BangladeshMicrosystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USAMicrosystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USAMitsubishi Electric Corporation, Advanced Technology R&D Center, Amagasaki, JapanMitsubishi Electric Research Laboratories, Cambridge, MA, USAMicrosystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USADepartment of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, BangladeshIn this work, a system-technology co-optimization (STCO) of the AlGaN/GaN multimetal gated (MMG) HEMT architecture for third-order transconductance (gm3) engineering and linearity improvement in the presence of fermi-level pinning (FLP) is reported. Through technology computer-aided design (TCAD), compact modeling, load-pull simulations and modulated signal simulations, it is shown that despite incorporating FLP, employing MMG scheme improves device level gm3 - suppression, leading to an improvement in output-referred third-order intercept point per unit dc power (OIP3/PDC) and third order intermodulation distortion (IMD3). Remarkably, OIP3/PDC of 18.9 dB is obtained considering an FLP factor of 0.43, which is a 10.7 dB improvement over the conventional HEMT. MMG HEMT exhibits an output-referred 1-dB compression point (P1-dB) of 3.60 W/mm, compared to 0.60 W/mm for the standard/conventional case. A comparative analysis on output power back-off (OBO) for conventional and MMG HEMT with different FLP factors establishes MMG as a robust architecture to FLP. Simulations involving 5G FR1 signals demonstrate that the adjacent channel power ratio (ACPR) is sustained below -40 dBc up to an output power of 20 dBm. 2.6% lower error vector magnitude (EVM) than baseline case is achieved by MMG HEMT at 5 GHz, under 100 MHz 64-QAM OFDM signals.https://ieeexplore.ieee.org/document/10767716/5GlinearityAlGaN/GaNhigh electron mobility transistor (HEMT)multi-metal gate (MMG)fermi level pinning |
| spellingShingle | Toiyob Hossain Tanvir Hossain A. K. M. Anindya Alam Bejoy Sikder Qingyun Xie Mengyang Yuan Eiji Yagyu Koon Hoo Teo Tomas Palacios Nadim Chowdhury System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity IEEE Journal of the Electron Devices Society 5G linearity AlGaN/GaN high electron mobility transistor (HEMT) multi-metal gate (MMG) fermi level pinning |
| title | System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity |
| title_full | System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity |
| title_fullStr | System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity |
| title_full_unstemmed | System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity |
| title_short | System-Technology Co-Optimization of Multimetal Gated AlGaN/GaN HEMT for Improved RF Linearity |
| title_sort | system technology co optimization of multimetal gated algan gan hemt for improved rf linearity |
| topic | 5G linearity AlGaN/GaN high electron mobility transistor (HEMT) multi-metal gate (MMG) fermi level pinning |
| url | https://ieeexplore.ieee.org/document/10767716/ |
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