A High-Performance SiO<sub>2</sub>/SiN<italic><sub>x</sub></italic> 1-D Photonic Crystal UV Filter Used for Solar-Blind Photodetectors
To improve the solar-blind/visible-blind photocurrent response rejection ratio of solar-blind photodetectors, we designed and fabricated a high-performance SiO<sub>2</sub>/SiN<sub>x</sub> 1-D photonic crystal (PC) ultraviolet (UV) filter on (0 ...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8778768/ |
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| Summary: | To improve the solar-blind/visible-blind photocurrent response rejection ratio of solar-blind photodetectors, we designed and fabricated a high-performance SiO<sub>2</sub>/SiN<sub>x</sub> 1-D photonic crystal (PC) ultraviolet (UV) filter on (0 0 0 1) double-polished sapphire substrate. When depositing SiN<italic><sub>x</sub></italic>, we found that employing NH<sub>3</sub> as nitrogen precursor instead of N<sub>2</sub> can simultaneously improve the peak reflectivity of filter stopband in the designed visible-blind region and the transmissivity in the solar-blind region. Research shows that it is associated with the H atom concentration in SiN<italic><sub>x</sub></italic> and the generation of Si-O-N transition layer at SiO<sub>2</sub>/SiN<italic><sub>x</sub></italic> interface. Finally, we obtained a high-performance SiO<sub>2</sub>/SiN<italic><sub>x</sub></italic> PC UV filter with a stopband reflectivity over 90% from 285 to 345 nm and a transmissivity over 80% in the solar-blind region. The UV filter is also demonstrated to have a good effect in improving the solar-blind/visible-blind photocurrent response rejection ratio of a back-illuminated AlGaN photodetector by depositing it to the back of the detector. |
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| ISSN: | 1943-0655 |