GaN Power Transistors in Converter Design Techniques

The expected outstanding performance of GaN-based transistors in power applications, characterized by high switching frequency, efficiency, and compactness, requires that the design rules of converter layout optimization, filtering, and shielding need to be reexamined. Addressing the above topics, t...

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Main Authors: Piotr J. Chrzan, Pawel B. Derkacz
Format: Article
Language:English
Published: MDPI AG 2025-05-01
Series:Energies
Subjects:
Online Access:https://www.mdpi.com/1996-1073/18/11/2890
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author Piotr J. Chrzan
Pawel B. Derkacz
author_facet Piotr J. Chrzan
Pawel B. Derkacz
author_sort Piotr J. Chrzan
collection DOAJ
description The expected outstanding performance of GaN-based transistors in power applications, characterized by high switching frequency, efficiency, and compactness, requires that the design rules of converter layout optimization, filtering, and shielding need to be reexamined. Addressing the above topics, this paper reviews commercial GaN power transistors and specifies their integration techniques, including printed circuit board (PCB) embedded solutions. Then, referring to the optimization results of a half-bridge inverter leg, design techniques are presented that reduce the harmful effect of inductive and capacitive internal converter couplings, thus mitigating the electromagnetic interference (EMI) conducted emissions.
format Article
id doaj-art-6d9642f182ba40a5b5c0c455fa7d1aad
institution Kabale University
issn 1996-1073
language English
publishDate 2025-05-01
publisher MDPI AG
record_format Article
series Energies
spelling doaj-art-6d9642f182ba40a5b5c0c455fa7d1aad2025-08-20T03:46:46ZengMDPI AGEnergies1996-10732025-05-011811289010.3390/en18112890GaN Power Transistors in Converter Design TechniquesPiotr J. Chrzan0Pawel B. Derkacz1Faculty of Electrical and Control Engineering, Gdańsk University of Technology, 80-233 Gdańsk, PolandArex—(WB Group), Hutnicza 3, 81-212 Gdynia, PolandThe expected outstanding performance of GaN-based transistors in power applications, characterized by high switching frequency, efficiency, and compactness, requires that the design rules of converter layout optimization, filtering, and shielding need to be reexamined. Addressing the above topics, this paper reviews commercial GaN power transistors and specifies their integration techniques, including printed circuit board (PCB) embedded solutions. Then, referring to the optimization results of a half-bridge inverter leg, design techniques are presented that reduce the harmful effect of inductive and capacitive internal converter couplings, thus mitigating the electromagnetic interference (EMI) conducted emissions.https://www.mdpi.com/1996-1073/18/11/2890gallium nitride (GaN) power transistorEMI mitigationPCB layout optimizationPCB embedding technologyhalf-bridge inverter
spellingShingle Piotr J. Chrzan
Pawel B. Derkacz
GaN Power Transistors in Converter Design Techniques
Energies
gallium nitride (GaN) power transistor
EMI mitigation
PCB layout optimization
PCB embedding technology
half-bridge inverter
title GaN Power Transistors in Converter Design Techniques
title_full GaN Power Transistors in Converter Design Techniques
title_fullStr GaN Power Transistors in Converter Design Techniques
title_full_unstemmed GaN Power Transistors in Converter Design Techniques
title_short GaN Power Transistors in Converter Design Techniques
title_sort gan power transistors in converter design techniques
topic gallium nitride (GaN) power transistor
EMI mitigation
PCB layout optimization
PCB embedding technology
half-bridge inverter
url https://www.mdpi.com/1996-1073/18/11/2890
work_keys_str_mv AT piotrjchrzan ganpowertransistorsinconverterdesigntechniques
AT pawelbderkacz ganpowertransistorsinconverterdesigntechniques