Ultrahigh dielectric permittivity in Hf0.5Zr0.5O2 thin-film capacitors
Abstract The ever-shrinking electrostatic capacitor, which is capable of storing substantial quantities of electrical charge, has found widespread applications in high-storage-density dynamic random access memory and energy-efficient complementary metal-oxide-semiconductor devices. Despite the high...
Saved in:
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-03-01
|
| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-57963-8 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849390427827863552 |
|---|---|
| author | Wen Di Zhang Zi Zheng Song Shu Qi Tang Jin Chen Wei Yan Cheng Bing Li Shi You Chen Zi Bin Chen An Quan Jiang |
| author_facet | Wen Di Zhang Zi Zheng Song Shu Qi Tang Jin Chen Wei Yan Cheng Bing Li Shi You Chen Zi Bin Chen An Quan Jiang |
| author_sort | Wen Di Zhang |
| collection | DOAJ |
| description | Abstract The ever-shrinking electrostatic capacitor, which is capable of storing substantial quantities of electrical charge, has found widespread applications in high-storage-density dynamic random access memory and energy-efficient complementary metal-oxide-semiconductor devices. Despite the high energy storage densities (133–152 J/cm3) and efficiencies (75–90%) that have been realized using relaxor ferroelectric thick films, low-permittivity interfacial layers in the ultrathin films have caused the overall permittivity to be one to two orders of magnitude lower than expected. However, innovative use of complementary metal-oxide-semiconductor-compatible HfO2-based materials with high permittivities (~52) could enable integration of these capacitors into few-nanometre-scale devices. This study reports an ultrahigh dielectric permittivity of 921, stored charge density of 349 μC/cm2, and energy density of 584 J/cm3 with nearly 100% efficiency within near-edge plasma-treated Hf0.5Zr0.5O2 thin-film capacitors when the Hf-based material’s ferroelectricity disappears suddenly after polarization fatigue. The ultrahigh dielectric permittivity originates from a distorted orthorhombic phase with ordered oxygen vacancies that enables high-density integration of extremely scaled logic and memory devices for low-voltage applications. |
| format | Article |
| id | doaj-art-6d79d4e3a97c44bcb324a4d7fe1f4bdb |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-6d79d4e3a97c44bcb324a4d7fe1f4bdb2025-08-20T03:41:40ZengNature PortfolioNature Communications2041-17232025-03-0116111010.1038/s41467-025-57963-8Ultrahigh dielectric permittivity in Hf0.5Zr0.5O2 thin-film capacitorsWen Di Zhang0Zi Zheng Song1Shu Qi Tang2Jin Chen Wei3Yan Cheng4Bing Li5Shi You Chen6Zi Bin Chen7An Quan Jiang8School of Microelectronics, Fudan UniversityState Key Laboratory of Ultra-precision Machining Technology, Department of Industrial and Systems Engineering, The Hong Kong Polytechnic UniversitySchool of Microelectronics, Fudan UniversitySchool of Microelectronics, Fudan UniversityKey Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal UniversitySchool of Life Science and Technology, ShanghaiTech UniversitySchool of Microelectronics, Fudan UniversityState Key Laboratory of Ultra-precision Machining Technology, Department of Industrial and Systems Engineering, The Hong Kong Polytechnic UniversitySchool of Microelectronics, Fudan UniversityAbstract The ever-shrinking electrostatic capacitor, which is capable of storing substantial quantities of electrical charge, has found widespread applications in high-storage-density dynamic random access memory and energy-efficient complementary metal-oxide-semiconductor devices. Despite the high energy storage densities (133–152 J/cm3) and efficiencies (75–90%) that have been realized using relaxor ferroelectric thick films, low-permittivity interfacial layers in the ultrathin films have caused the overall permittivity to be one to two orders of magnitude lower than expected. However, innovative use of complementary metal-oxide-semiconductor-compatible HfO2-based materials with high permittivities (~52) could enable integration of these capacitors into few-nanometre-scale devices. This study reports an ultrahigh dielectric permittivity of 921, stored charge density of 349 μC/cm2, and energy density of 584 J/cm3 with nearly 100% efficiency within near-edge plasma-treated Hf0.5Zr0.5O2 thin-film capacitors when the Hf-based material’s ferroelectricity disappears suddenly after polarization fatigue. The ultrahigh dielectric permittivity originates from a distorted orthorhombic phase with ordered oxygen vacancies that enables high-density integration of extremely scaled logic and memory devices for low-voltage applications.https://doi.org/10.1038/s41467-025-57963-8 |
| spellingShingle | Wen Di Zhang Zi Zheng Song Shu Qi Tang Jin Chen Wei Yan Cheng Bing Li Shi You Chen Zi Bin Chen An Quan Jiang Ultrahigh dielectric permittivity in Hf0.5Zr0.5O2 thin-film capacitors Nature Communications |
| title | Ultrahigh dielectric permittivity in Hf0.5Zr0.5O2 thin-film capacitors |
| title_full | Ultrahigh dielectric permittivity in Hf0.5Zr0.5O2 thin-film capacitors |
| title_fullStr | Ultrahigh dielectric permittivity in Hf0.5Zr0.5O2 thin-film capacitors |
| title_full_unstemmed | Ultrahigh dielectric permittivity in Hf0.5Zr0.5O2 thin-film capacitors |
| title_short | Ultrahigh dielectric permittivity in Hf0.5Zr0.5O2 thin-film capacitors |
| title_sort | ultrahigh dielectric permittivity in hf0 5zr0 5o2 thin film capacitors |
| url | https://doi.org/10.1038/s41467-025-57963-8 |
| work_keys_str_mv | AT wendizhang ultrahighdielectricpermittivityinhf05zr05o2thinfilmcapacitors AT zizhengsong ultrahighdielectricpermittivityinhf05zr05o2thinfilmcapacitors AT shuqitang ultrahighdielectricpermittivityinhf05zr05o2thinfilmcapacitors AT jinchenwei ultrahighdielectricpermittivityinhf05zr05o2thinfilmcapacitors AT yancheng ultrahighdielectricpermittivityinhf05zr05o2thinfilmcapacitors AT bingli ultrahighdielectricpermittivityinhf05zr05o2thinfilmcapacitors AT shiyouchen ultrahighdielectricpermittivityinhf05zr05o2thinfilmcapacitors AT zibinchen ultrahighdielectricpermittivityinhf05zr05o2thinfilmcapacitors AT anquanjiang ultrahighdielectricpermittivityinhf05zr05o2thinfilmcapacitors |