3 300 V IGBT Based on Enhanced Trench Metal Oxide Semiconductor Technology with High Performance
It developed a new enhanced trench metal oxide semiconductor (TMOS+) 3 300 V IGBT with soft punch through (SPT) concept and n-well layer. Its on-state voltage (Tj=150 ℃ ) is 25% lower than that of 3 300 V planar enhanced double diffused metal oxide semiconductor (DMOS+) IGBT, and its reverse bias sa...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | zho |
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Editorial Office of Control and Information Technology
2017-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.05.011 |
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| _version_ | 1849224800191381504 |
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| author | ZHOU Feiyu NING Xubin Luther Ngwendson XIAO Qiang Ian Deviny DAI Xiaoping |
| author_facet | ZHOU Feiyu NING Xubin Luther Ngwendson XIAO Qiang Ian Deviny DAI Xiaoping |
| author_sort | ZHOU Feiyu |
| collection | DOAJ |
| description | It developed a new enhanced trench metal oxide semiconductor (TMOS+) 3 300 V IGBT with soft punch through (SPT) concept and n-well layer. Its on-state voltage (Tj=150 ℃ ) is 25% lower than that of 3 300 V planar enhanced double diffused metal oxide semiconductor (DMOS+) IGBT, and its reverse bias safe operation area (RBSOA) is robust with 11 times rated current turn-off capability. Hence, the rated current of the TMOS+ IGBT module is 20% increased than the conventional one with the same size, which has more benefit for higher power applications. |
| format | Article |
| id | doaj-art-6cacc5a263f440f591e06f2a4472c9f8 |
| institution | Kabale University |
| issn | 2096-5427 |
| language | zho |
| publishDate | 2017-01-01 |
| publisher | Editorial Office of Control and Information Technology |
| record_format | Article |
| series | Kongzhi Yu Xinxi Jishu |
| spelling | doaj-art-6cacc5a263f440f591e06f2a4472c9f82025-08-25T06:53:16ZzhoEditorial Office of Control and Information TechnologyKongzhi Yu Xinxi Jishu2096-54272017-01-01346569823208303 300 V IGBT Based on Enhanced Trench Metal Oxide Semiconductor Technology with High PerformanceZHOU FeiyuNING XubinLuther NgwendsonXIAO QiangIan DevinyDAI XiaopingIt developed a new enhanced trench metal oxide semiconductor (TMOS+) 3 300 V IGBT with soft punch through (SPT) concept and n-well layer. Its on-state voltage (Tj=150 ℃ ) is 25% lower than that of 3 300 V planar enhanced double diffused metal oxide semiconductor (DMOS+) IGBT, and its reverse bias safe operation area (RBSOA) is robust with 11 times rated current turn-off capability. Hence, the rated current of the TMOS+ IGBT module is 20% increased than the conventional one with the same size, which has more benefit for higher power applications.http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.05.011IGBTenhanced trenchon-state voltagereverse bias safe operation area (RBSOA)power density |
| spellingShingle | ZHOU Feiyu NING Xubin Luther Ngwendson XIAO Qiang Ian Deviny DAI Xiaoping 3 300 V IGBT Based on Enhanced Trench Metal Oxide Semiconductor Technology with High Performance Kongzhi Yu Xinxi Jishu IGBT enhanced trench on-state voltage reverse bias safe operation area (RBSOA) power density |
| title | 3 300 V IGBT Based on Enhanced Trench Metal Oxide Semiconductor Technology with High Performance |
| title_full | 3 300 V IGBT Based on Enhanced Trench Metal Oxide Semiconductor Technology with High Performance |
| title_fullStr | 3 300 V IGBT Based on Enhanced Trench Metal Oxide Semiconductor Technology with High Performance |
| title_full_unstemmed | 3 300 V IGBT Based on Enhanced Trench Metal Oxide Semiconductor Technology with High Performance |
| title_short | 3 300 V IGBT Based on Enhanced Trench Metal Oxide Semiconductor Technology with High Performance |
| title_sort | 3 300 v igbt based on enhanced trench metal oxide semiconductor technology with high performance |
| topic | IGBT enhanced trench on-state voltage reverse bias safe operation area (RBSOA) power density |
| url | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.05.011 |
| work_keys_str_mv | AT zhoufeiyu 3300vigbtbasedonenhancedtrenchmetaloxidesemiconductortechnologywithhighperformance AT ningxubin 3300vigbtbasedonenhancedtrenchmetaloxidesemiconductortechnologywithhighperformance AT lutherngwendson 3300vigbtbasedonenhancedtrenchmetaloxidesemiconductortechnologywithhighperformance AT xiaoqiang 3300vigbtbasedonenhancedtrenchmetaloxidesemiconductortechnologywithhighperformance AT iandeviny 3300vigbtbasedonenhancedtrenchmetaloxidesemiconductortechnologywithhighperformance AT daixiaoping 3300vigbtbasedonenhancedtrenchmetaloxidesemiconductortechnologywithhighperformance |