APA (7th ed.) Citation

Feiyu, Z., Xubin, N., Ngwendson, L., Qiang, X., Deviny, I., & Xiaoping, D. 3 300 V IGBT Based on Enhanced Trench Metal Oxide Semiconductor Technology with High Performance. Editorial Office of Control and Information Technology.

Chicago Style (17th ed.) Citation

Feiyu, ZHOU, NING Xubin, Luther Ngwendson, XIAO Qiang, Ian Deviny, and DAI Xiaoping. 3 300 V IGBT Based on Enhanced Trench Metal Oxide Semiconductor Technology with High Performance. Editorial Office of Control and Information Technology.

MLA (9th ed.) Citation

Feiyu, ZHOU, et al. 3 300 V IGBT Based on Enhanced Trench Metal Oxide Semiconductor Technology with High Performance. Editorial Office of Control and Information Technology.