An Investigation in the I-gate Body Contact for Partially Depleted SOI MOSFET
In this paper for the first time, a circuit model for multi-finger I-gate body-contacted silicon-on-insulator MOSFET is presented. The model parameters are adjusted using simulation of a 45 nm SOI nMOSFET. Using the model, typical body voltage for a 35 finger device is obtained and applied to the tr...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
OICC Press
2024-02-01
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| Series: | Majlesi Journal of Electrical Engineering |
| Subjects: | |
| Online Access: | https://oiccpress.com/mjee/article/view/5264 |
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