An Investigation in the I-gate Body Contact for Partially Depleted SOI MOSFET

An Investigation in the I-gate Body Contact for Partially Depleted SOI MOSFET

In this paper for the first time, a circuit model for multi-finger I-gate body-contacted silicon-on-insulator MOSFET is presented. The model parameters are adjusted using simulation of a 45 nm SOI nMOSFET. Using the model, typical body voltage for a 35 finger device is obtained and applied to the tr...

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Bibliographic Details
Main Authors: Arash Daghighi, Hassan Rafiei
Format: Article
Language:English
Published: OICC Press 2024-02-01
Series:Majlesi Journal of Electrical Engineering
Subjects:
body resistance. Drain Induced Barrier Lowering
I-gate Body Contact
Silicon-on-Insulator MOSFET
Two-Dimensional Device Simulation
Online Access:https://oiccpress.com/mjee/article/view/5264
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Summary:In this paper for the first time, a circuit model for multi-finger I-gate body-contacted silicon-on-insulator MOSFET is presented. The model parameters are adjusted using simulation of a 45 nm SOI nMOSFET. Using the model, typical body voltage for a 35 finger device is obtained and applied to the transistor. The threshold voltage and drain current are obtained for the first transistor and center ones in the multi-finger structure. The drain induced barrier lowering of the center transistor is increased by 30% and off-current 40 times than that of the first transistor. Simulation results verified the I-gate body contact model in lack of controlling the body voltage comparing with the conventional body contacts e.g. H-gate. Ø§ÙتحÙÛÙ ÙÛ I-GATE اÙاتصا٠اÙجسم ÙMOSFET أبÙاء اÙعرا٠اÙمÙضب جزئÛاÙÛ Ùذ٠اÙÙرÙØ© ÙÙمرة اÙØ£ÙÙÙØ Ûتم تÙدÛم ÙمÙذج اÙدائرة ÙÙمتعددة إصبع I-بÙابة اتصÙت ÙÛئة MOSFET اÙسÛÙÛÚ©Ù٠عÙ٠اÙعازÙ. Ûتم ضبط معاÙم اÙÙمÙذج باستخدام محاکاة Ù45 ÙاÙÙمتر أبÙاء اÙعرا٠nMOSFET. باستخدام ÙمÙØ°Ø¬Ø Ûتم اÙحصÙÙ ÙمÙØ°Ø¬Û Ø§ÙجÙد اÙجسم ÙجÙاز 35 إصبع ÙتطبÛÙÙا عÙ٠اÙتراÙزستÙر. ÙÛتم اÙحصÙ٠عÙ٠عتبة اÙجÙد ÙاستÙزا٠اÙحاÙÛØ© ÙÙØ£Ù٠م٠اÙتراÙزستÙر Ùمرکز ÙÛ ÙÛک٠متعدد اÙأصابع. Ûتم زÛادة حاجز استÙزا٠بÙع٠اÙØ®Ùاض اÙتراÙزستÙر مرکز بÙسبة 30Ùª Ùخارج اÙتÛار 40 مرات م٠اÙتراÙزستÙر اÙØ£ÙÙ. اÙتحÙÙ Ùتائج اÙمحاکاة عÙÙ I-بÙابة ÙمÙذج ÙÛئة اÙاتصا٠ÙÛ Ø¹Ø¯Ù… اÙسÛطرة عÙ٠اÙجÙد اÙجسم مÙارÙØ© مع اÙاتصاÙات ÙÛئة اÙتÙÙÛدÛØ© مث٠H-اÙبÙابة.
ISSN:2345-377X
2345-3796

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