Parametric Modeling and Analysis of High Power IGBT Device
In the high-power IGBT module commutation circuit, under the combined impact of stray inductance and d<italic>i</italic>/d<italic>t</italic>, the IGBT is under significant voltage and current stresses during the processes of switching on and off, which increases system losses...
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| Main Authors: | , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2023-08-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2096-5427.2023.04.006 |
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| Summary: | In the high-power IGBT module commutation circuit, under the combined impact of stray inductance and d<italic>i</italic>/d<italic>t</italic>, the IGBT is under significant voltage and current stresses during the processes of switching on and off, which increases system losses and electromagnetic interference, lowers system reliability, and seriously affects the safe and stable operation of the system. Due to the lack of accurate and universal IGBT models, traditional analytic methods require continuous experimental tests and analyses to optimize design for different commutation circuits and schemes. They are not only costly and time-consuming, but also inefficient. Based on the analysis of the influence of stray inductance in commutation circuit on the switching characteristics of IGBT, this paper uses the Voltammetry method to extract the stray inductance. According to the IGBT data manual, parametric modeling of IGBT is achieved through data import and curve fitting methods, and the simulation comparison of the established parametric model verifies the effectiveness of the stray inductance extraction method and the accuracy of the established parametric model. The comparison between the prototype test and simulation test shows that the voltages of the two are basically consistent, and the error between the experimental and simulated values of the voltage spike of the lower device is just 4V, which indicates good consistency. The findings are of great help to the simulation analysis of complex circuits, and data prediction and method guidance in future experiments, and valuable for the fault reproduction, failure analysis and design optimization of high-power IGBT modules. |
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| ISSN: | 2096-5427 |