InP/ZnS core/shell quantum dots: Synthesis, characterization and their application in fullerene derivative based flexible solar cells
Herein, we report on the synthesis and characterization of p-type semiconductor indium phosphide/zinc sulphide (InP/ZnS) core/shell quantum dots (QDs) prepared via a simple solvothermal method and their potential application in bulk heterojunction (BHJ) flexible solar cell (SC). The BHJ SC composed...
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2025-02-01
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| author | Chen Zhichu Muhammad Tahir Fida Muhammad Fakhra Aziz Ambreen Ayub Fazal Badshah Moamen S. Refat Sadiye M. Cakmak Shanza Rehan Abdel Majid A. Adam Amnah Mohammed Alsuhaibani Afida Ayob Mahidur R Sarker Adam Khan |
| author_facet | Chen Zhichu Muhammad Tahir Fida Muhammad Fakhra Aziz Ambreen Ayub Fazal Badshah Moamen S. Refat Sadiye M. Cakmak Shanza Rehan Abdel Majid A. Adam Amnah Mohammed Alsuhaibani Afida Ayob Mahidur R Sarker Adam Khan |
| author_sort | Chen Zhichu |
| collection | DOAJ |
| description | Herein, we report on the synthesis and characterization of p-type semiconductor indium phosphide/zinc sulphide (InP/ZnS) core/shell quantum dots (QDs) prepared via a simple solvothermal method and their potential application in bulk heterojunction (BHJ) flexible solar cell (SC). The BHJ SC composed of donor–acceptor (D-A) configuration at nanoscale provides larger interfacial junction area throughout the bulk volume of the photo-absorber D-A blend that facilitates excitons to efficiently dissociate within the bulk layer at D-A interface. Hence, InP/ZnS core–shell QDs and a fullerene derivative – phenyl C61 butyric acid methyl ester (PCBM) – are used as hybrid inorganic–organic D-A materials, respectively, to fabricate Ag/LiF/InP/ZnS-PCBM/P3HT/ITO/PET BHJ flexible SC. Indium tin oxide (ITO) coated on polyethylene terephthalate (PET), poly(3-hexylthiophene) (P3HT), lithium fluoride (LiF) and silver (Ag) are employed as a flexible substrate, hole transport layer (HTL), electron transport layer (ETL) and counter electrode, respectively. Photovoltaic (PV) properties of the fabricated BHJ flexible SC are studied under standard testing conditions (STC) i.e., 25 0C, 1.5 AM global and 100 mW/cm2 irradiation, which exhibit fill factor (FF) of 59 ± 0.02 % and power conversion efficiency (PCE) of 4.22 ± 0.05 %. Also, the heterojunction characteristics are investigated in dark condition (0 lx) to find series resistance (Rs), ideality factor (n), and reverse saturation current (I0). X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and ultraviolet–visible (UV–vis) spectroscopy are performed to further investigate the properties of InP/ZnS-PCBM thin films. Transmission electron microscopy (TEM) image of InP/ZnS core/shell QDs confirmed the successful synthesis of QDs having an average size of 5 ± 1 nm. The InP/ZnS-PCBM D-A photo-absorber layer reveals its potential as one of good candidates for high performance BHJ flexible SCs. |
| format | Article |
| id | doaj-art-6c07079333eb44158f4ed1d6e1dbb680 |
| institution | DOAJ |
| issn | 2211-3797 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Elsevier |
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| spelling | doaj-art-6c07079333eb44158f4ed1d6e1dbb6802025-08-20T02:43:20ZengElsevierResults in Physics2211-37972025-02-016910812010.1016/j.rinp.2025.108120InP/ZnS core/shell quantum dots: Synthesis, characterization and their application in fullerene derivative based flexible solar cellsChen Zhichu0Muhammad Tahir1Fida Muhammad2Fakhra Aziz3Ambreen Ayub4Fazal Badshah5Moamen S. Refat6Sadiye M. Cakmak7Shanza Rehan8Abdel Majid A. Adam9Amnah Mohammed Alsuhaibani10Afida Ayob11Mahidur R Sarker12Adam Khan13School of Electrical and Information Engineering, Hubei University of Automotive Technology, Shiyan 442002, People's Republic of ChinaSemiconductor Physics & Devices Laboratory, Department of Physics, Faculty of Physical and Numerical Sciences, Abdul Wali Khan University Mardan, 23200, Pakistan; Corresponding authors.Semiconductor Physics & Devices Laboratory, Department of Physics, Faculty of Physical and Numerical Sciences, Abdul Wali Khan University Mardan, 23200, PakistanDepartment of Electronics, University of Peshawar, KP, PakistanDepartment of Physics, Women University Mardan, 23200 KP, PakistanSchool of Electrical and Information Engineering, Hubei University of Automotive Technology, Shiyan 442002, People's Republic of ChinaDepartment of Chemistry, College of Science, Taif University, P.O. Box 11099, Taif 21944, Saudi ArabiaProgram of Medical Monitoring Techniques, Osmangazi University, Eskisehir 26040 Eskisehir, TurkeyFaculty of Materials and Chemical Engineering, GIK Institute of Engineering Sciences and Technology, 23640 Topi, PakistanDepartment of Chemistry, College of Science, Taif University, P.O. Box 11099, Taif 21944, Saudi ArabiaDepartment of Physical Sport Sciences, College of Sport Sciences & Physical Activity, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riyadh 11671, Saudi ArabiaCentre for Integrated Systems Engineering and Advanced Technologies (INTEGRA), Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia, Bangi 43600, Malaysia; Corresponding authors.Institute of Visual Informatics, Universiti Kebangsaan, Malaysia Bangi, Selangor 43600, Malaysia; Universidad de Diseno, Innovacion y Tecnología, UDIT, Av. Alfonso XIII, 97, 28016 Madrid, SpainDepartment of Electronics Engineering, University of Engineering & Technology, Peshawar (Abbottabad Campus), Abbottabad, PakistanHerein, we report on the synthesis and characterization of p-type semiconductor indium phosphide/zinc sulphide (InP/ZnS) core/shell quantum dots (QDs) prepared via a simple solvothermal method and their potential application in bulk heterojunction (BHJ) flexible solar cell (SC). The BHJ SC composed of donor–acceptor (D-A) configuration at nanoscale provides larger interfacial junction area throughout the bulk volume of the photo-absorber D-A blend that facilitates excitons to efficiently dissociate within the bulk layer at D-A interface. Hence, InP/ZnS core–shell QDs and a fullerene derivative – phenyl C61 butyric acid methyl ester (PCBM) – are used as hybrid inorganic–organic D-A materials, respectively, to fabricate Ag/LiF/InP/ZnS-PCBM/P3HT/ITO/PET BHJ flexible SC. Indium tin oxide (ITO) coated on polyethylene terephthalate (PET), poly(3-hexylthiophene) (P3HT), lithium fluoride (LiF) and silver (Ag) are employed as a flexible substrate, hole transport layer (HTL), electron transport layer (ETL) and counter electrode, respectively. Photovoltaic (PV) properties of the fabricated BHJ flexible SC are studied under standard testing conditions (STC) i.e., 25 0C, 1.5 AM global and 100 mW/cm2 irradiation, which exhibit fill factor (FF) of 59 ± 0.02 % and power conversion efficiency (PCE) of 4.22 ± 0.05 %. Also, the heterojunction characteristics are investigated in dark condition (0 lx) to find series resistance (Rs), ideality factor (n), and reverse saturation current (I0). X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and ultraviolet–visible (UV–vis) spectroscopy are performed to further investigate the properties of InP/ZnS-PCBM thin films. Transmission electron microscopy (TEM) image of InP/ZnS core/shell QDs confirmed the successful synthesis of QDs having an average size of 5 ± 1 nm. The InP/ZnS-PCBM D-A photo-absorber layer reveals its potential as one of good candidates for high performance BHJ flexible SCs.http://www.sciencedirect.com/science/article/pii/S2211379725000142Hybrid bulk heterojunction (BHJ)Flexible solar cellQuantum dots (QDs) synthesisInP/ZnS core/shell QDsPower conversion efficiency (PCE) |
| spellingShingle | Chen Zhichu Muhammad Tahir Fida Muhammad Fakhra Aziz Ambreen Ayub Fazal Badshah Moamen S. Refat Sadiye M. Cakmak Shanza Rehan Abdel Majid A. Adam Amnah Mohammed Alsuhaibani Afida Ayob Mahidur R Sarker Adam Khan InP/ZnS core/shell quantum dots: Synthesis, characterization and their application in fullerene derivative based flexible solar cells Results in Physics Hybrid bulk heterojunction (BHJ) Flexible solar cell Quantum dots (QDs) synthesis InP/ZnS core/shell QDs Power conversion efficiency (PCE) |
| title | InP/ZnS core/shell quantum dots: Synthesis, characterization and their application in fullerene derivative based flexible solar cells |
| title_full | InP/ZnS core/shell quantum dots: Synthesis, characterization and their application in fullerene derivative based flexible solar cells |
| title_fullStr | InP/ZnS core/shell quantum dots: Synthesis, characterization and their application in fullerene derivative based flexible solar cells |
| title_full_unstemmed | InP/ZnS core/shell quantum dots: Synthesis, characterization and their application in fullerene derivative based flexible solar cells |
| title_short | InP/ZnS core/shell quantum dots: Synthesis, characterization and their application in fullerene derivative based flexible solar cells |
| title_sort | inp zns core shell quantum dots synthesis characterization and their application in fullerene derivative based flexible solar cells |
| topic | Hybrid bulk heterojunction (BHJ) Flexible solar cell Quantum dots (QDs) synthesis InP/ZnS core/shell QDs Power conversion efficiency (PCE) |
| url | http://www.sciencedirect.com/science/article/pii/S2211379725000142 |
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