Performance and reliability improvements in SiC(0001) MOS devices via two-step annealing in H2/Ar gas mixtures
While nitric oxide annealing is a standard technique for improving the performance of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors, degradation of reliability remains a serious issue. Here, we present an alternative approach based on diluted hydrogen annealing, a process...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
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| Online Access: | https://doi.org/10.35848/1882-0786/adf6ff |
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| _version_ | 1849222092141101056 |
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| author | Takuma Kobayashi Hiroki Fujimoto Shinji Kamihata Keiji Hachiken Masahiro Hara Heiji Watanabe |
| author_facet | Takuma Kobayashi Hiroki Fujimoto Shinji Kamihata Keiji Hachiken Masahiro Hara Heiji Watanabe |
| author_sort | Takuma Kobayashi |
| collection | DOAJ |
| description | While nitric oxide annealing is a standard technique for improving the performance of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors, degradation of reliability remains a serious issue. Here, we present an alternative approach based on diluted hydrogen annealing, a process widely employed in silicon MOS technology. The key point of our approach is 2-step high-temperature hydrogen annealing before and after gate oxide deposition. A low interface state density (3.2 × 10 ^11 eV ^−1 cm ^−2 ) was obtained near the conduction band edge of SiC ( E _c − E = 0.2 eV). High peak channel mobility (17.2 cm ^2 V ^−1 s ^−1 ) and improved reliability against positive and negative bias stress were confirmed. |
| format | Article |
| id | doaj-art-6bf7e56fae9a42f5bc3404e1b66da49b |
| institution | Kabale University |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-6bf7e56fae9a42f5bc3404e1b66da49b2025-08-26T08:00:32ZengIOP PublishingApplied Physics Express1882-07862025-01-0118808100210.35848/1882-0786/adf6ffPerformance and reliability improvements in SiC(0001) MOS devices via two-step annealing in H2/Ar gas mixturesTakuma Kobayashi0https://orcid.org/0000-0002-2755-5079Hiroki Fujimoto1https://orcid.org/0000-0002-8443-6279Shinji Kamihata2Keiji Hachiken3Masahiro Hara4https://orcid.org/0000-0001-9748-8011Heiji Watanabe5https://orcid.org/0000-0002-7916-3093Graduate School of Engineering, The University of Osaka , Suita, Osaka 565-0871, JapanGraduate School of Engineering, The University of Osaka , Suita, Osaka 565-0871, JapanGraduate School of Engineering, The University of Osaka , Suita, Osaka 565-0871, JapanGraduate School of Engineering, The University of Osaka , Suita, Osaka 565-0871, JapanGraduate School of Engineering, The University of Osaka , Suita, Osaka 565-0871, JapanGraduate School of Engineering, The University of Osaka , Suita, Osaka 565-0871, JapanWhile nitric oxide annealing is a standard technique for improving the performance of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors, degradation of reliability remains a serious issue. Here, we present an alternative approach based on diluted hydrogen annealing, a process widely employed in silicon MOS technology. The key point of our approach is 2-step high-temperature hydrogen annealing before and after gate oxide deposition. A low interface state density (3.2 × 10 ^11 eV ^−1 cm ^−2 ) was obtained near the conduction band edge of SiC ( E _c − E = 0.2 eV). High peak channel mobility (17.2 cm ^2 V ^−1 s ^−1 ) and improved reliability against positive and negative bias stress were confirmed.https://doi.org/10.35848/1882-0786/adf6ffsilicon carbide (SiC)silicon dioxide (SiO2)interface state densityMOS structureMOSFEThydrogen annealing |
| spellingShingle | Takuma Kobayashi Hiroki Fujimoto Shinji Kamihata Keiji Hachiken Masahiro Hara Heiji Watanabe Performance and reliability improvements in SiC(0001) MOS devices via two-step annealing in H2/Ar gas mixtures Applied Physics Express silicon carbide (SiC) silicon dioxide (SiO2) interface state density MOS structure MOSFET hydrogen annealing |
| title | Performance and reliability improvements in SiC(0001) MOS devices via two-step annealing in H2/Ar gas mixtures |
| title_full | Performance and reliability improvements in SiC(0001) MOS devices via two-step annealing in H2/Ar gas mixtures |
| title_fullStr | Performance and reliability improvements in SiC(0001) MOS devices via two-step annealing in H2/Ar gas mixtures |
| title_full_unstemmed | Performance and reliability improvements in SiC(0001) MOS devices via two-step annealing in H2/Ar gas mixtures |
| title_short | Performance and reliability improvements in SiC(0001) MOS devices via two-step annealing in H2/Ar gas mixtures |
| title_sort | performance and reliability improvements in sic 0001 mos devices via two step annealing in h2 ar gas mixtures |
| topic | silicon carbide (SiC) silicon dioxide (SiO2) interface state density MOS structure MOSFET hydrogen annealing |
| url | https://doi.org/10.35848/1882-0786/adf6ff |
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