Impact of Sn Particle-Induced Mask Diffraction on EUV Lithography Performance Across Different Pattern Types

Impact of Sn Particle-Induced Mask Diffraction on EUV Lithography Performance Across Different Pattern Types

This study investigates the differences in the lithographic impact of particles on the pellicle surface depending on the type of extreme ultraviolet (EUV) mask pattern. Using an EUV ptychography microscope, we analyzed how mask imaging performance is affected by locally obstructed mask diffraction c...

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Bibliographic Details
Main Authors: Seungchan Moon, Dong Gi Lee, Jinhyuk Choi, Junho Hong, Taeho Lee, Yasin Ekinci, Jinho Ahn
Format: Article
Language:English
Published: MDPI AG 2025-03-01
Series:Photonics
Subjects:
extreme ultraviolet lithography (EUV)
EUV mask metrology
EUV pellicle
particle
through-pellicle imaging
EUV ptychography
Online Access:https://www.mdpi.com/2304-6732/12/3/266
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