Impact of Sn Particle-Induced Mask Diffraction on EUV Lithography Performance Across Different Pattern Types
This study investigates the differences in the lithographic impact of particles on the pellicle surface depending on the type of extreme ultraviolet (EUV) mask pattern. Using an EUV ptychography microscope, we analyzed how mask imaging performance is affected by locally obstructed mask diffraction c...
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| Format: | Article |
| Language: | English |
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MDPI AG
2025-03-01
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| Series: | Photonics |
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| Online Access: | https://www.mdpi.com/2304-6732/12/3/266 |
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| _version_ | 1850091300915773440 |
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| author | Seungchan Moon Dong Gi Lee Jinhyuk Choi Junho Hong Taeho Lee Yasin Ekinci Jinho Ahn |
| author_facet | Seungchan Moon Dong Gi Lee Jinhyuk Choi Junho Hong Taeho Lee Yasin Ekinci Jinho Ahn |
| author_sort | Seungchan Moon |
| collection | DOAJ |
| description | This study investigates the differences in the lithographic impact of particles on the pellicle surface depending on the type of extreme ultraviolet (EUV) mask pattern. Using an EUV ptychography microscope, we analyzed how mask imaging performance is affected by locally obstructed mask diffraction caused by a 10 μm × 10 μm patterned tin particle intentionally fabricated on the pellicle surface. The resulting critical dimension variations were found to be approximately three times greater in line-and-space patterns than in contact hole patterns. Based on these findings, we recommend defining the critical size of particles according to the mask pattern type to optimize lithographic quality. |
| format | Article |
| id | doaj-art-6bd4ec8fd6e6496f8891df69d2d340f3 |
| institution | DOAJ |
| issn | 2304-6732 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Photonics |
| spelling | doaj-art-6bd4ec8fd6e6496f8891df69d2d340f32025-08-20T02:42:25ZengMDPI AGPhotonics2304-67322025-03-0112326610.3390/photonics12030266Impact of Sn Particle-Induced Mask Diffraction on EUV Lithography Performance Across Different Pattern TypesSeungchan Moon0Dong Gi Lee1Jinhyuk Choi2Junho Hong3Taeho Lee4Yasin Ekinci5Jinho Ahn6Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, Republic of KoreaCenter for Hyperscale, Hyperfunction, Heterogeneous Integration Pioneering Semiconductor Technology, Hanyang University, Seoul 04763, Republic of KoreaDivision of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, Republic of KoreaCenter for Hyperscale, Hyperfunction, Heterogeneous Integration Pioneering Semiconductor Technology, Hanyang University, Seoul 04763, Republic of KoreaCenter for Hyperscale, Hyperfunction, Heterogeneous Integration Pioneering Semiconductor Technology, Hanyang University, Seoul 04763, Republic of KoreaLaboratory for X-Ray Nanoscience and Technologies, Paul Scherrer Institute, 5232 Villigen, SwitzerlandDivision of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, Republic of KoreaThis study investigates the differences in the lithographic impact of particles on the pellicle surface depending on the type of extreme ultraviolet (EUV) mask pattern. Using an EUV ptychography microscope, we analyzed how mask imaging performance is affected by locally obstructed mask diffraction caused by a 10 μm × 10 μm patterned tin particle intentionally fabricated on the pellicle surface. The resulting critical dimension variations were found to be approximately three times greater in line-and-space patterns than in contact hole patterns. Based on these findings, we recommend defining the critical size of particles according to the mask pattern type to optimize lithographic quality.https://www.mdpi.com/2304-6732/12/3/266extreme ultraviolet lithography (EUV)EUV mask metrologyEUV pellicleparticlethrough-pellicle imagingEUV ptychography |
| spellingShingle | Seungchan Moon Dong Gi Lee Jinhyuk Choi Junho Hong Taeho Lee Yasin Ekinci Jinho Ahn Impact of Sn Particle-Induced Mask Diffraction on EUV Lithography Performance Across Different Pattern Types Photonics extreme ultraviolet lithography (EUV) EUV mask metrology EUV pellicle particle through-pellicle imaging EUV ptychography |
| title | Impact of Sn Particle-Induced Mask Diffraction on EUV Lithography Performance Across Different Pattern Types |
| title_full | Impact of Sn Particle-Induced Mask Diffraction on EUV Lithography Performance Across Different Pattern Types |
| title_fullStr | Impact of Sn Particle-Induced Mask Diffraction on EUV Lithography Performance Across Different Pattern Types |
| title_full_unstemmed | Impact of Sn Particle-Induced Mask Diffraction on EUV Lithography Performance Across Different Pattern Types |
| title_short | Impact of Sn Particle-Induced Mask Diffraction on EUV Lithography Performance Across Different Pattern Types |
| title_sort | impact of sn particle induced mask diffraction on euv lithography performance across different pattern types |
| topic | extreme ultraviolet lithography (EUV) EUV mask metrology EUV pellicle particle through-pellicle imaging EUV ptychography |
| url | https://www.mdpi.com/2304-6732/12/3/266 |
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