Study of GaN Hall Effect Magnetic Sensors
The GaN Hall sensors are the latest advancements in non-intrusive active monitoring, designed to be integrated on GaN power transistors to enable in-situ condition monitoring, hence boosting device reliability and life. This paper describes step-by-step the basic procedures required for the fabricat...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10876122/ |
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