Low Hysteresis Vanadium Dioxide Integrated on Silicon Using Complementary Metal‐Oxide Semiconductor Compatible Oxide Buffer Layer

VO2 undergoes a metal‐insulator transition (MIT) at ≈70 °C, which induces large variations in its electrical and wavelength‐dependent optical properties. These features make VO2 a highly sought‐after compound for optical, thermal, and neuromorphic applications. To foster the development of VO2‐based...

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Bibliographic Details
Main Authors:	Swayam Prakash Sahoo, Matthieu Bugnet, Ingrid Cañero Infante, Victor Pierron, Laurence Méchin, Rebecca Cervasio, Pierre Hemme, Jean‐Blaise Brubach, Pascale Roy, Luc G. Fréchette, Anne D. Lamirand, Bertrand Vilquin
Format:	Article
Language:	English
Published:	Wiley-VCH 2025-02-01
Series:	Small Science
Subjects:	M1–M2 structural phase transition metal‐insulator phase transitions Mott‐Peierls transition strain‐influenced hystereses Vanadium dioxide
Online Access:	https://doi.org/10.1002/smsc.202400398
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Low Hysteresis Vanadium Dioxide Integrated on Silicon Using Complementary Metal‐Oxide Semiconductor Compatible Oxide Buffer Layer

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