To suppress tin whisker growth by using (100)-oriented copper
Effect of Cu crystallographic orientations on the Sn whisker growth is investigated in this study. Three types of Cu under-layer (randomly, <111>, <100>-oriented) were prepared for electroplating of pure Sn. After 672 h of room temperature (RT) storage, a lot of whiskers were found on th...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-03-01
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| Series: | Journal of Materials Research and Technology |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2238785425002686 |
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| Summary: | Effect of Cu crystallographic orientations on the Sn whisker growth is investigated in this study. Three types of Cu under-layer (randomly, <111>, <100>-oriented) were prepared for electroplating of pure Sn. After 672 h of room temperature (RT) storage, a lot of whiskers were found on the Sn surface electroplated on the randomly-oriented Cu, whereas very few whiskers can be seen on those electroplated on the <111>− or the <100>-oriented Cu. It is also found that the behavior of intermetallic compound (IMC) growth at the Sn–Cu interface is quite different between the randomly- and specifically-oriented Cu films, which leads to divergent phenomena of Sn whisker growth. Furthermore, after 7944 h of RT storage, both the <111>− and the <100>-oriented Cu films are proven to be effective on preventing Sn whisker growth. Orientation analysis indicated the Sn grains on the <111>− and the <100>-oriented Cu possesses <110> preferred orientation, which may slow down the formation of the Cu–Sn IMCs. |
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| ISSN: | 2238-7854 |