Polarity controlled ScAlN multi-layer transduction structures grown by molecular beam epitaxy
We report on the molecular beam epitaxial growth and characterization of polarity-controlled single and multi-layer Scandium Aluminum Nitride (ScAlN) transduction structures grown directly on ScAlN templates deposited by physical vapor deposition (PVD) on Si(001) substrates. It is observed that dire...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2024-11-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0225280 |
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| author | Shubham Mondal Eitan Hershkovitz Garrett Baucom Md Mehedi Hasan Tanim Shaurya Dabas Baibhab Chatterjee Honggyu Kim Roozbeh Tabrizian Zetian Mi |
| author_facet | Shubham Mondal Eitan Hershkovitz Garrett Baucom Md Mehedi Hasan Tanim Shaurya Dabas Baibhab Chatterjee Honggyu Kim Roozbeh Tabrizian Zetian Mi |
| author_sort | Shubham Mondal |
| collection | DOAJ |
| description | We report on the molecular beam epitaxial growth and characterization of polarity-controlled single and multi-layer Scandium Aluminum Nitride (ScAlN) transduction structures grown directly on ScAlN templates deposited by physical vapor deposition (PVD) on Si(001) substrates. It is observed that direct epitaxial growth on PVD N-polar ScAlN leads to the flipping of polarity, resulting in metal (M)-polar ScAlN. By effectively removing the surface impurities, e.g., oxides, utilizing an in situ gallium (Ga)-assisted flushing technique, we show that high quality N-polar ScAlN epilayers can be achieved on PVD N-polar ScAlN templates. The polarity of ScAlN is confirmed by utilizing polarity-sensitive wet chemical etching and atomic-resolution scanning transmission electron microscopy. Through interface engineering, i.e., the controlled formation or removal of surface oxides, we have further demonstrated the ability to epitaxially grow an alternating tri-layer piezoelectric structure, consisting of N-polar, M-polar, and N-polar ScAlN layers. Such multi-layer, polarity-controlled ScAlN structures promise a manufacturable platform for the design and development of a broad range of acoustic and photonic devices. |
| format | Article |
| id | doaj-art-6a31955baaa541c09024a82879dbc576 |
| institution | OA Journals |
| issn | 2166-532X |
| language | English |
| publishDate | 2024-11-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj-art-6a31955baaa541c09024a82879dbc5762025-08-20T02:30:46ZengAIP Publishing LLCAPL Materials2166-532X2024-11-011211111111111111-710.1063/5.0225280Polarity controlled ScAlN multi-layer transduction structures grown by molecular beam epitaxyShubham Mondal0Eitan Hershkovitz1Garrett Baucom2Md Mehedi Hasan Tanim3Shaurya Dabas4Baibhab Chatterjee5Honggyu Kim6Roozbeh Tabrizian7Zetian Mi8Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USADepartment of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USADepartment of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USADepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USAElectrical and Computer Engineering Department, University of Florida, Gainesville, Florida 32611, USAElectrical and Computer Engineering Department, University of Florida, Gainesville, Florida 32611, USADepartment of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USAElectrical and Computer Engineering Department, University of Florida, Gainesville, Florida 32611, USADepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USAWe report on the molecular beam epitaxial growth and characterization of polarity-controlled single and multi-layer Scandium Aluminum Nitride (ScAlN) transduction structures grown directly on ScAlN templates deposited by physical vapor deposition (PVD) on Si(001) substrates. It is observed that direct epitaxial growth on PVD N-polar ScAlN leads to the flipping of polarity, resulting in metal (M)-polar ScAlN. By effectively removing the surface impurities, e.g., oxides, utilizing an in situ gallium (Ga)-assisted flushing technique, we show that high quality N-polar ScAlN epilayers can be achieved on PVD N-polar ScAlN templates. The polarity of ScAlN is confirmed by utilizing polarity-sensitive wet chemical etching and atomic-resolution scanning transmission electron microscopy. Through interface engineering, i.e., the controlled formation or removal of surface oxides, we have further demonstrated the ability to epitaxially grow an alternating tri-layer piezoelectric structure, consisting of N-polar, M-polar, and N-polar ScAlN layers. Such multi-layer, polarity-controlled ScAlN structures promise a manufacturable platform for the design and development of a broad range of acoustic and photonic devices.http://dx.doi.org/10.1063/5.0225280 |
| spellingShingle | Shubham Mondal Eitan Hershkovitz Garrett Baucom Md Mehedi Hasan Tanim Shaurya Dabas Baibhab Chatterjee Honggyu Kim Roozbeh Tabrizian Zetian Mi Polarity controlled ScAlN multi-layer transduction structures grown by molecular beam epitaxy APL Materials |
| title | Polarity controlled ScAlN multi-layer transduction structures grown by molecular beam epitaxy |
| title_full | Polarity controlled ScAlN multi-layer transduction structures grown by molecular beam epitaxy |
| title_fullStr | Polarity controlled ScAlN multi-layer transduction structures grown by molecular beam epitaxy |
| title_full_unstemmed | Polarity controlled ScAlN multi-layer transduction structures grown by molecular beam epitaxy |
| title_short | Polarity controlled ScAlN multi-layer transduction structures grown by molecular beam epitaxy |
| title_sort | polarity controlled scaln multi layer transduction structures grown by molecular beam epitaxy |
| url | http://dx.doi.org/10.1063/5.0225280 |
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