Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell
Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In...
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| Format: | Article |
| Language: | English |
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Wiley
2021-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2021/7506837 |
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| author | F. X. Abomo Abega A. Teyou Ngoupo J. M. B. Ndjaka |
| author_facet | F. X. Abomo Abega A. Teyou Ngoupo J. M. B. Ndjaka |
| author_sort | F. X. Abomo Abega |
| collection | DOAJ |
| description | Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters (JSC, VOC, FF, and η). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/i-(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5×1013 cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% (JSC=18.95 mA·cm−2, VOC=0.973 V, and FF=68.95%). This work presents a contribution to improving the performance of a-Si-based solar cells. |
| format | Article |
| id | doaj-art-69e7f3006c9046c9aeb7a1fa03657afd |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2021-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-69e7f3006c9046c9aeb7a1fa03657afd2025-02-03T07:23:30ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2021-01-01202110.1155/2021/75068377506837Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar CellF. X. Abomo Abega0A. Teyou Ngoupo1J. M. B. Ndjaka2Université de Yaoundé 1, Faculté des Sciences, Département de Physique, BP, 812 Yaoundé, CameroonUniversité de Yaoundé 1, Faculté des Sciences, Département de Physique, BP, 812 Yaoundé, CameroonUniversité de Yaoundé 1, Faculté des Sciences, Département de Physique, BP, 812 Yaoundé, CameroonNumerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters (JSC, VOC, FF, and η). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/i-(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5×1013 cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% (JSC=18.95 mA·cm−2, VOC=0.973 V, and FF=68.95%). This work presents a contribution to improving the performance of a-Si-based solar cells.http://dx.doi.org/10.1155/2021/7506837 |
| spellingShingle | F. X. Abomo Abega A. Teyou Ngoupo J. M. B. Ndjaka Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell International Journal of Photoenergy |
| title | Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell |
| title_full | Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell |
| title_fullStr | Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell |
| title_full_unstemmed | Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell |
| title_short | Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell |
| title_sort | numerical design of ultrathin hydrogenated amorphous silicon based solar cell |
| url | http://dx.doi.org/10.1155/2021/7506837 |
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