Study on the Influence of Local High Steps on the Uniformity of Global Critical Dimension in Implant Layers
In the processes of integrated circuits fabrication, the distribution of high steps in implant layers is one of the critical factors that affects the uniformity and quality of implant-layer photoresist critical dimension(CD). Based on the study of the distribution, density, width and the distance fr...
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| Format: | Article |
| Language: | English |
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Editorial Department of Journal of Nantong University (Natural Science Edition)
2020-12-01
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| Series: | Nantong Daxue xuebao. Ziran kexue ban |
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| Online Access: | https://ngzke.cbpt.cnki.net/portal/journal/portal/client/paper/79e8b677fcd41fa72122d50cefb8aa4a |
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| _version_ | 1849222380371574784 |
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| author | WANG Qiang; WU Tingxi; SONG Shuaidi |
| author_facet | WANG Qiang; WU Tingxi; SONG Shuaidi |
| author_sort | WANG Qiang; WU Tingxi; SONG Shuaidi |
| collection | DOAJ |
| description | In the processes of integrated circuits fabrication, the distribution of high steps in implant layers is one of the critical factors that affects the uniformity and quality of implant-layer photoresist critical dimension(CD). Based on the study of the distribution, density, width and the distance from the exposure patterns to the high steps on the wafer are studied, the key high-step parameters that affect the CD uniformity are found, and an optimized layoutdesign method is proposed. The experimental results reveal that the CD uniformity is improved with the high steps distributed uniformly. The step density has little effect on the CD uniformity; the larger the step width is, the smaller the average value of CD is, but there is no obvious effect on the value of 3σ; the farther the distance between the high steps and the exposure patterns is, the better CD uniformity is. After applying the optimized layout-design method, the CD uniformity of devices and the stability of production are improved. The CD uniformity of implant layers lithography is increased by 49.4%. |
| format | Article |
| id | doaj-art-69e5991dc4e14bfd8fcc5210d8a3884d |
| institution | Kabale University |
| issn | 1673-2340 |
| language | English |
| publishDate | 2020-12-01 |
| publisher | Editorial Department of Journal of Nantong University (Natural Science Edition) |
| record_format | Article |
| series | Nantong Daxue xuebao. Ziran kexue ban |
| spelling | doaj-art-69e5991dc4e14bfd8fcc5210d8a3884d2025-08-26T06:01:47ZengEditorial Department of Journal of Nantong University (Natural Science Edition)Nantong Daxue xuebao. Ziran kexue ban1673-23402020-12-011904364110.12194/j.ntu.20200423002Study on the Influence of Local High Steps on the Uniformity of Global Critical Dimension in Implant LayersWANG Qiang; WU Tingxi; SONG Shuaidi0School of Information Science and Technology, Nantong UniversityIn the processes of integrated circuits fabrication, the distribution of high steps in implant layers is one of the critical factors that affects the uniformity and quality of implant-layer photoresist critical dimension(CD). Based on the study of the distribution, density, width and the distance from the exposure patterns to the high steps on the wafer are studied, the key high-step parameters that affect the CD uniformity are found, and an optimized layoutdesign method is proposed. The experimental results reveal that the CD uniformity is improved with the high steps distributed uniformly. The step density has little effect on the CD uniformity; the larger the step width is, the smaller the average value of CD is, but there is no obvious effect on the value of 3σ; the farther the distance between the high steps and the exposure patterns is, the better CD uniformity is. After applying the optimized layout-design method, the CD uniformity of devices and the stability of production are improved. The CD uniformity of implant layers lithography is increased by 49.4%.https://ngzke.cbpt.cnki.net/portal/journal/portal/client/paper/79e8b677fcd41fa72122d50cefb8aa4acritical dimension uniformityhigh stepsimplant layersexposure patternlithography yield |
| spellingShingle | WANG Qiang; WU Tingxi; SONG Shuaidi Study on the Influence of Local High Steps on the Uniformity of Global Critical Dimension in Implant Layers Nantong Daxue xuebao. Ziran kexue ban critical dimension uniformity high steps implant layers exposure pattern lithography yield |
| title | Study on the Influence of Local High Steps on the Uniformity of Global Critical Dimension in Implant Layers |
| title_full | Study on the Influence of Local High Steps on the Uniformity of Global Critical Dimension in Implant Layers |
| title_fullStr | Study on the Influence of Local High Steps on the Uniformity of Global Critical Dimension in Implant Layers |
| title_full_unstemmed | Study on the Influence of Local High Steps on the Uniformity of Global Critical Dimension in Implant Layers |
| title_short | Study on the Influence of Local High Steps on the Uniformity of Global Critical Dimension in Implant Layers |
| title_sort | study on the influence of local high steps on the uniformity of global critical dimension in implant layers |
| topic | critical dimension uniformity high steps implant layers exposure pattern lithography yield |
| url | https://ngzke.cbpt.cnki.net/portal/journal/portal/client/paper/79e8b677fcd41fa72122d50cefb8aa4a |
| work_keys_str_mv | AT wangqiangwutingxisongshuaidi studyontheinfluenceoflocalhighstepsontheuniformityofglobalcriticaldimensioninimplantlayers |