The effects of raddiation on the optical properties of GERMANIUM SELENIDE semiconductor.
Study was made on the optical properties of Ge2oSe8othinfilms prepared by vac-uum evaporation as radiated by (0,34,69) Gy of 13 ray.The optical band gab Eg and tailing band A.Et were studied in the photon energy range ( 1 to 3)eV. The a-Ge20Se8o film was found to be indirect gap with energy gap of (...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
University of Baghdad, College of Science for Women
2004-06-01
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| Series: | مجلة بغداد للعلوم |
| Online Access: | http://bsj.uobaghdad.edu.iq/index.php/BSJ/article/view/568 |
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| Summary: | Study was made on the optical properties of Ge2oSe8othinfilms prepared by vac-uum evaporation as radiated by (0,34,69) Gy of 13 ray.The optical band gab Eg and tailing band A.Et were studied in the photon energy range ( 1 to 3)eV. The a-Ge20Se8o film was found to be indirect gap with energy gap of (1.965,1.9 , 1.82) eV at radiated by B ray with absorption doses of (0,34,69)Gy respectively.The Ea and AEt of Ge20Se80 films showed adecrease in E8 and an increase in AEt with radiation. This be-havior may be related to structural defects and dangling bonds. |
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| ISSN: | 2078-8665 2411-7986 |